公开(公告)号：US20230411521A1

公开(公告)日：2023-12-21

申请号：US18036727

申请日：2021-11-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuki ITO ,  Hitoshi KUNITAKE ,  Kazuki TANEMURA

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L29/78391 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/4908 ,  G11C11/223

Abstract: A transistor having a large S value or a semiconductor device performing calculation utilizing a transistor operation in a subthreshold region is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a gate electrode including a region overlapping with the oxide semiconductor layer with an insulating layer therebetween, and a first conductive layer including a region overlapping with the oxide semiconductor layer with a ferroelectric layer therebetween. In particular, the ferroelectric layer includes a crystal having a crystal structure exhibiting ferroelectricity.

公开(公告)号：US20230301099A1

公开(公告)日：2023-09-21

申请号：US18013917

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Yuki ITO ,  Shunpei YAMAZAKI

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

Abstract: A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor extend in the first direction, part of the first semiconductor functions as a channel formation region of the writing transistor, and part of the second semiconductor functions as a channel formation region of the reading transistor. The second semiconductor includes a region in contact with a first layer containing a first metal element.

公开(公告)号：US20240260257A1

公开(公告)日：2024-08-01

申请号：US18559083

申请日：2022-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Yuki ITO

IPC: H10B12/00 ,  H01L29/786

CPC classification number: H10B12/50 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device that can be subjected to multipoint measurement is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer includes a first multiplexer, a second multiplexer, m (m is an integer of 1 or more) analog switches electrically connected to the first multiplexer, and n (n is an integer of 1 or more) analog switches electrically connected to the second multiplexer. The second layer includes m×n transistors. Each of the m analog switches is electrically connected to n transistors, and each of the n analog switches is electrically connected to m transistors.

公开(公告)号：US20230329002A1

公开(公告)日：2023-10-12

申请号：US18023618

申请日：2021-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Haruyuki BABA ,  Yuki ITO ,  Fumito ISAKA ,  Kazuki TANEMURA ,  Yasumasa YAMANE ,  Tatsuya ONUKI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.