SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20230301099A1

    公开(公告)日:2023-09-21

    申请号:US18013917

    申请日:2021-07-06

    CPC classification number: H10B43/27 H10B41/27 H10B41/35 H10B43/35

    Abstract: A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor extend in the first direction, part of the first semiconductor functions as a channel formation region of the writing transistor, and part of the second semiconductor functions as a channel formation region of the reading transistor. The second semiconductor includes a region in contact with a first layer containing a first metal element.

    SEMICONDUCTOR DEVICE
    3.
    发明公开

    公开(公告)号:US20240260257A1

    公开(公告)日:2024-08-01

    申请号:US18559083

    申请日:2022-04-25

    CPC classification number: H10B12/50 H01L29/78648 H01L29/7869

    Abstract: A semiconductor device that can be subjected to multipoint measurement is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer includes a first multiplexer, a second multiplexer, m (m is an integer of 1 or more) analog switches electrically connected to the first multiplexer, and n (n is an integer of 1 or more) analog switches electrically connected to the second multiplexer. The second layer includes m×n transistors. Each of the m analog switches is electrically connected to n transistors, and each of the n analog switches is electrically connected to m transistors.

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