公开(公告)号：US20240107865A1

公开(公告)日：2024-03-28

申请号：US18275431

申请日：2022-01-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shingo EGUCHI ,  Hiroki ADACHI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Naoto KUSUMOTO ,  Kensuke YOSHIZUMI ,  Shunpei YAMAZAKI

IPC分类号： H10K71/16 ,  C23C14/04 ,  C23C14/56

CPC分类号： H10K71/166 ,  C23C14/042 ,  C23C14/566

摘要： Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

公开(公告)号：US20230335646A1

公开(公告)日：2023-10-19

申请号：US18211652

申请日：2023-06-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/78618 ,  H01L29/7869 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20210098629A1

公开(公告)日：2021-04-01

申请号：US17120774

申请日：2020-12-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Yuhei SATO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

摘要： To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US20180233597A1

公开(公告)日：2018-08-16

申请号：US15946149

申请日：2018-04-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshitaka YAMAMOTO ,  Tetsuhiro TANAKA ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Takayuki INOUE ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L27/1156

CPC分类号： H01L29/7869 ,  H01L27/1156 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

摘要： A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

公开(公告)号：US20180033892A1

公开(公告)日：2018-02-01

申请号：US15652299

申请日：2017-07-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yasumasa YAMANE ,  Motomu KURATA ,  Ryota HODO ,  Takahisa ISHIYAMA

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/105 ,  H01L29/51

CPC分类号： H01L29/7869 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

摘要： A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization or high integration is provided. The semiconductor device includes a first barrier layer, a second barrier layer, a third barrier layer, a transistor including an oxide, an insulator, and a conductor. The insulator includes an oxygen-excess region. The insulator and the oxide are between the first barrier layer and the second barrier layer. The conductor is in an opening of the first barrier layer, an opening of the second barrier layer, and an opening of the insulator with the third barrier layer positioned therebetween.

公开(公告)号：US20170317196A1

公开(公告)日：2017-11-02

申请号：US15605160

申请日：2017-05-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro TANAKA ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Takayuki INOUE ,  Shunpei YAMAZAKI

IPC分类号： H01L29/66 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

摘要： A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125 ° C. and lower than or equal to 450 ° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

公开(公告)号：US20170141233A1

公开(公告)日：2017-05-18

申请号：US15417266

申请日：2017-01-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/24

CPC分类号： H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20170125553A1

公开(公告)日：2017-05-04

申请号：US15350213

申请日：2016-11-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Masayuki SAKAKURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO

IPC分类号： H01L29/66 ,  H01L21/465 ,  H01L21/02 ,  H01L21/441 ,  H01L29/786 ,  H01L21/477

CPC分类号： H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US20160343867A1

公开(公告)日：2016-11-24

申请号：US15159873

申请日：2016-05-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Yasumasa YAMANE ,  Masashi OOTA

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L21/84 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78696

摘要： A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

公开(公告)号：US20240188378A1

公开(公告)日：2024-06-06

申请号：US18271962

申请日：2022-01-11

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Hajime KIMURA ,  Tatsuya ONUKI

IPC分类号： H10K59/80 ,  H10K59/12

CPC分类号： H10K59/80515 ,  H10K59/1201

摘要： A high-resolution or high-definition display device is provided. The display device is manufactured by forming a plurality of first pixel electrodes aligned in a first direction and a plurality of second pixel electrodes aligned in the first direction so that the plurality of first pixel electrodes and the plurality of second pixel electrodes are aligned in a second direction; forming a first layer and a first sacrificial layer; processing the first layer and the first sacrificial layer to expose at least part of the second pixel electrodes; forming a second layer and a second sacrificial layer; processing the second layer and the second sacrificial layer to expose at least part of the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; forming a third layer and a counter electrode; removing at least part of each of the third layer and the counter electrode included in a region between the adjacent pixel electrodes in a top view; forming a protective layer over the counter electrode; processing the protective layer to expose at least part of the counter electrode that overlaps with the pixel electrodes; and forming a conductive layer over the counter electrode and the protective layer.