公开(公告)号：US10374123B2

公开(公告)日：2019-08-06

申请号：US15563526

申请日：2016-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

公开(公告)号：US20180090640A1

公开(公告)日：2018-03-29

申请号：US15563526

申请日：2016-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.