公开(公告)号：US20160072015A1

公开(公告)日：2016-03-10

申请号：US14846592

申请日：2015-09-04

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jung Hwan Hwang ,  Chang Suk Han ,  Chang Geun Jang ,  Hwa Mok Kim

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/60 ,  H01L33/58 ,  H01L33/06 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Disclosed herein are a vertical ultraviolet light emitting device including: a p-type semiconductor layer including Al; an active layer positioned on the p-type semiconductor layer and including the Al; an n-type semiconductor layer positioned on the active layer and including the Al; a metal contact layer positioned on the n-type semiconductor layer and doped with an n type; and a pad formed on the metal contact layer, wherein the metal contact layer has an Al content lower than that of the n-type semiconductor layer, and a method for manufacturing the same. According to the exemplary embodiments of the present invention, the metal contact layer is formed on the n-type semiconductor layer to allow the metal contact layer instead of the n-type semiconductor layer including AlGaN to act as the contact layer, thereby effectively improving the n type contact characteristics of the vertical ultraviolet light emitting device.

Abstract translation: 本文公开了一种垂直紫外线发射装置，包括：包括Al的p型半导体层; 位于p型半导体层上且包括Al的有源层; 位于有源层上且包括Al的n型半导体层; 位于n型半导体层上并掺杂有n型的金属接触层; 以及形成在所述金属接触层上的焊盘及其制造方法，其中，所述金属接触层的Al含量低于所述n型半导体层的Al含量。 根据本发明的示例性实施例，金属接触层形成在n型半导体层上，以允许金属接触层代替包括AlGaN的n型半导体层作为接触层，从而有效地改善了 垂直紫外线发射装置的n型接触特性。

公开(公告)号：US10374123B2

公开(公告)日：2019-08-06

申请号：US15563526

申请日：2016-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

公开(公告)号：US20180090640A1

公开(公告)日：2018-03-29

申请号：US15563526

申请日：2016-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.