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    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20160056334A1

    公开(公告)日：2016-02-25

    申请号：US14830651

    申请日：2015-08-19

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Sam Seok Jang ,  Woo Chul Kwak ,  Kyung Hae Kim ,  Jung Whan Jung ,  Yong Hyun Baek

    IPC: H01L33/14 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/325

    Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

    Abstract translation: 提供发光器件以包括设置在p型半导体层和有源层之间的n型半导体层，p型半导体层，有源层和电子阻挡层。 p型半导体层包括空穴注入层，p型接触层和空穴传输层。 空穴传输层包括多个未掺杂层和设置在未掺杂层之间的至少一个中间掺杂层。 未掺杂层中的至少一个包括空穴浓度随着与空穴注入层或p型接触层的距离的增加而减小的区域，并且中间掺杂层被设置为至少部分地与孔的区域重叠 传输层，空穴浓度为p型接触层的空穴浓度的62％〜87％的区域。

    Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09287367B2

    公开(公告)日：2016-03-15

    申请号：US14526427

    申请日：2014-10-28

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Woo Chul Kwak ,  Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung ,  Yong Hyun Baek ,  Sam Seok Jang ,  Su Youn Hong ,  Mi Gyeong Jeong

    IPC: H01L29/06 ,  H01L29/20 ,  H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L33/04 ,  H01L33/02 ,  H01L33/22

    CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/0607 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L33/02 ,  H01L33/025 ,  H01L33/04 ,  H01L33/20 ,  H01L33/22

    Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

    Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。

    Light emitting device and manufacturing method therefor
    5.
    发明授权
    Light emitting device and manufacturing method therefor 有权

    公开(公告)号：US10361339B2

    公开(公告)日：2019-07-23

    申请号：US15526724

    申请日：2015-11-12

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jung Whan Jung ,  Kyung Hae Kim ,  Woo Chul Kwak ,  Sam Seok Jang

    IPC: H01L33/00 ,  H01L33/12 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

    Abstract: A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive type semiconductor layer positioned on the lower nitride layer; a second conductive type semiconductor layer positioned on the first conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers.

    Light emitting device and method of fabricating the same
    6.
    发明授权
    Light emitting device and method of fabricating the same 有权

    公开(公告)号：US09799800B2

    公开(公告)日：2017-10-24

    申请号：US14830651

    申请日：2015-08-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Sam Seok Jang ,  Woo Chul Kwak ,  Kyung Hae Kim ,  Jung Whan Jung ,  Yong Hyun Baek

    IPC: H01L33/14 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/145 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/325

    Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

    Method of growing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith
    8.
    发明授权
    Method of growing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith 有权
    生长氮化镓基半导体层的方法及其制造发光器件的方法

    公开(公告)号：US09449815B2

    公开(公告)日：2016-09-20

    申请号：US14056664

    申请日：2013-10-17

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seung Kyu Choi ,  Woo Chul Kwak ,  Chae Hon Kim ,  Jung Whan Jung

    IPC: H01L21/02

    CPC classification number: H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

    Abstract: Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

    Abstract translation: 本发明的示例性实施例涉及通过金属有机化学气相沉积来生长氮化镓基半导体层的方法，包括在衬底中设置衬底，在衬底上生长第一导电型氮化镓基半导体层， 第一室压力，在高于第一室压力的第二室压力下在第一导电型氮化镓基半导体层上生长氮化镓基有源层，以及生长第二导电型氮化镓基半导体层 在低于第二室压力的第三室压力下在有源层上。

    UV light emitting device
    10.
    发明授权
    UV light emitting device 有权

    公开(公告)号：US10374123B2

    公开(公告)日：2019-08-06

    申请号：US15563526

    申请日：2016-03-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

    IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

    Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

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