公开(公告)号：US10388832B2

公开(公告)日：2019-08-20

申请号：US15969723

申请日：2018-05-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Ji Hyeon Jeong ,  Kyu Ho Lee ,  Joon Hee Lee

IPC: H01L27/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32 ,  H01L33/20 ,  H01L33/14 ,  H01L33/06

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.

公开(公告)号：US20180323343A1

公开(公告)日：2018-11-08

申请号：US15969723

申请日：2018-05-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Ji Hyeon Jeong ,  Kyu Ho Lee ,  Joon Hee Lee

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.