公开(公告)号：US20140361247A1

公开(公告)日：2014-12-11

申请号：US14467470

申请日：2014-08-25

Applicant: SEOUL VIOSYS CO., LTD. ,  MITSUBISHI CHEMICAL CORPORATION

Inventor： Seung Kyu CHOI ,  Chae Hon Kim ,  Jung Whan Jung ,  Ki Bum Nam ,  Kenji Shimoyama ,  Kaori Kurihara

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

Abstract translation: 本文公开了一种发光二极管（LED），包括：氮化镓衬底; 设置在氮化镓衬底上的基于氮化镓的第一接触层; 氮化镓基第二接触层; 具有多量子阱结构并设置在第一和第二接触层之间的有源层; 以及具有多层结构并设置在第一接触层和有源层之间的超晶格层。 通过使用氮化镓衬底，可以提高半导体层的结晶度，另外通过在第一接触层和有源层之间设置超晶格层，可以在有源层中产生的晶体缺陷可以 被阻止

公开(公告)号：US20140162437A1

公开(公告)日：2014-06-12

申请号：US14056664

申请日：2013-10-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seung Kyu CHOI ,  Woo Chul KWAK ,  Chae Hon KIM ,  Jung Whan JUNG

IPC: H01L21/02

CPC classification number: H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

Abstract: Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

Abstract translation: 本发明的示例性实施例涉及通过金属有机化学气相沉积来生长氮化镓基半导体层的方法，包括在衬底中设置衬底，在衬底上生长第一导电型氮化镓基半导体层， 第一室压力，在高于第一室压力的第二室压力下在第一导电型氮化镓基半导体层上生长氮化镓基有源层，以及生长第二导电型氮化镓基半导体层 在低于第二室压力的第三室压力下在有源层上。