公开(公告)号：US20250022984A1

公开(公告)日：2025-01-16

申请号：US18897497

申请日：2024-09-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Ji Hun KANG ,  Chae Hon KIM ,  Ji Hoon PARK

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

公开(公告)号：US20210280738A1

公开(公告)日：2021-09-09

申请号：US17193443

申请日：2021-03-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hoon PARK ,  Ji Hun KANG ,  Chae Hon KIM ,  Yong Hyun BAEK ,  Hyo Shik CHOI

IPC: H01L33/00 ,  H01L21/66

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

公开(公告)号：US20230070171A1

公开(公告)日：2023-03-09

申请号：US17939689

申请日：2022-09-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chae Hon KIM

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/62 ,  H01L33/32

Abstract: A light emitting diode and a method of fabricating the same are provided. The light emitting diode according to exemplary embodiments includes a lower n-type semiconductor layer, an active layer, a p-type semiconductor layer, a high-concentration n-type semiconductor layer, and an upper n-type semiconductor layer. The high concentration n-type semiconductor layer can have a higher n-type doping concentration than that of the lower or upper n-type semiconductor layer. Oxygen concentrations on a lower surface and an upper surface of the high-concentration n-type semiconductor layer may be substantially same. An electron blocking layer may be interposed between the active layer and the p-type semiconductor layer.

公开(公告)号：US20210119082A1

公开(公告)日：2021-04-22

申请号：US17119139

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Toshiya YOKOGAWA ,  Chae Hon KIM ,  Chung Hoon LEE

IPC: H01L33/32 ,  H01L33/60 ,  H01L33/40 ,  H01L33/38

Abstract: A group III-V light-emitting diode is provided. The light-emitting diode includes a light generating portion including an active layer interposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The active layer generates light. The light-emitting diode further includes an optical trap disposed on an optical path of light generated from the active layer. The optical trap includes a light absorption layer interposed between light guide layers. The light-emitting diode further includes a side reflector disposed on a side surface of the optical trap.

公开(公告)号：US20180351042A1

公开(公告)日：2018-12-06

申请号：US16100783

申请日：2018-08-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min JANG ,  Seon Min BAE ,  Jae Hee LIM ,  Chang Yeon KIM ,  Chae Hon KIM

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/06 ,  H01L33/40 ,  H01L33/62 ,  H01L33/64

Abstract: A light-emitting diode includes: a gallium nitride substrate; a first semiconductor layer disposed thereon; a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer; a first contact layer including an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part; a second contact layer disposed on the mesa in contact with the second semiconductor layer; an upper insulation layer having first and second opening parts overlapping the first and second contact layers; and first and second electrode pads electrically connected to the first and second contact layers through the first and second opening parts, wherein the LED can be driven at 150 A/cm2 or more and has a maximum junction temperature of 180° C. or more.

公开(公告)号：US20240297208A1

公开(公告)日：2024-09-05

申请号：US18661054

申请日：2024-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chae Hon KIM ,  So Ra LEE

IPC: H01L27/15 ,  H01L33/30 ,  H01L33/48

CPC classification number: H01L27/156 ,  H01L33/30 ,  H01L33/486

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

公开(公告)号：US20240222564A1

公开(公告)日：2024-07-04

申请号：US18608508

申请日：2024-03-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min JANG ,  Chae Hon KIM ,  Chang Youn KIM ,  Jae Hee LIM

IPC: H01L33/40 ,  H01L23/00 ,  H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/405 ,  H01L24/13 ,  H01L33/10 ,  H01L33/32 ,  H01L33/60 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/20 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

公开(公告)号：US20240136467A1

公开(公告)日：2024-04-25

申请号：US18530694

申请日：2023-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Ji Hun KANG ,  Chae Hon KIM ,  Ji Hoon PARK ,  So Ra LEE

IPC: H01L33/06 ,  G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  F21S6/003 ,  G09G2300/0452

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

公开(公告)号：US20230197913A1

公开(公告)日：2023-06-22

申请号：US18083212

申请日：2022-12-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Ki Ho PARK ,  Jong Min JANG ,  Chae Hon KIM ,  Sang Min KIM

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/22 ,  H01L33/52 ,  H01L33/60

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/52 ,  H01L33/60 ,  H01L33/0093

Abstract: A light emitting device and a light emitting module including the same are disclosed. The light emitting module may include: a circuit board; a plurality of light emitting devices disposed on the circuit board and emitting UV light; a plurality of wavelength conversion portions each disposed on a light emission surface of the light emitting device emitting UV light and converting a wavelength of light emitted from the light emitting device; and a molding portion covering the light emitting devices and the wavelength conversion portions formed on the circuit board. Each of the light emitting devices may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. One surface of the first semiconductor layer may correspond to the light emission surface of the light emitting device. In addition, at least one of the wavelength conversion portions may convert light emitted from the light emitting device into light having a different color than light converted by another wavelength conversion portion.

公开(公告)号：US20210242371A1

公开(公告)日：2021-08-05

申请号：US17165177

申请日：2021-02-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Ji Hun KANG ,  Chae Hon KIM ,  Ji Hoon PARK

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.