公开(公告)号：US09570294B2

公开(公告)日：2017-02-14

申请号：US14803371

申请日：2015-07-20

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Haomin Wang ,  Li He ,  Lingxiu Chen ,  Hong Xie ,  Huishan Wang ,  Shujie Tang ,  Lei Li ,  Daoli Zhang ,  Xiaoming Xie ,  Mianheng Jiang

IPC分类号： H01L21/02 ,  H01L21/311

CPC分类号： H01L21/02527 ,  C01B32/182 ,  C01B2204/06 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02658

摘要： A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

摘要翻译： 一种h-BN上石墨烯纳米棒的制备方法，包括：1）采用金属催化蚀刻法在h-BN上形成具有纳米带状凹槽结构的h-BN凹槽模板; 2）采用化学气相沉积法在h-BN槽模板中生长石墨烯纳米棒。 在本发明中，采用CVD方法在h-BN上直接制备形态可控的石墨烯纳米棒，这有助于解决石墨烯难以在绝缘基板上成核和生长的长期关键问题，并且 避免了由石墨烯转移的复杂过程引起的一系列问题以及随后的纳米棒等的制造。

公开(公告)号：US10928304B2

公开(公告)日：2021-02-23

申请号：US15990777

申请日：2018-05-28

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Haomin Wang ,  Lingxiu Chen ,  Li He ,  Huishan Wang ,  Hong Xie ,  Xiujun Wang ,  Xiaoming Xie

IPC分类号： G01N21/17 ,  C01B32/182 ,  C01B32/186 ,  B82Y40/00

摘要： A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.