公开(公告)号：US20170256635A1

公开(公告)日：2017-09-07

申请号：US15506670

申请日：2015-06-03

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Atsushi OGAWA ,  Manabu TOHSAKI ,  Mai OKAZAKI ,  Yohsuke FUJISHIGE ,  Masayuki TAJIRI ,  Nobuyuki ITO

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7783 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: In a nitride semiconductor including a Si substrate and a nitride semiconductor stacked body disposed on the Si substrate, the half value width of an X-ray diffraction rocking curve of the Si substrate is less than 160 arcsec.

公开(公告)号：US20170141187A1

公开(公告)日：2017-05-18

申请号：US15127642

申请日：2015-04-17

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Nobuyuki ITO ,  Manabu TOHSAKI ,  Atsushi OGAWA

IPC: H01L29/06 ,  H01L29/812 ,  H01L29/66 ,  H01L29/205 ,  H01L29/10 ,  H01L23/373 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/0634 ,  H01L23/3677 ,  H01L23/3738 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/812

Abstract: A nitride compound semiconductor has a substrate and a nitride compound semiconductor stack on the substrate. The nitride compound semiconductor stack includes a multilayer buffer layer, a channel layer on this multilayer buffer layer, and an electron supply layer on this channel layer. A recess extends from the surface of the electron supply layer through the channel layer and the multilayer buffer layer. A heat dissipation layer in this recess is contiguous to the multilayer buffer layer and the channel layer and has a higher thermal conductivity than the multilayer buffer layer.

公开(公告)号：US20160343308A1

公开(公告)日：2016-11-24

申请号：US15114564

申请日：2014-08-29

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masahiro HASEGAWA ,  Hiroyuki HAKOI ,  Akira SAKAI ,  Hidefumi YOSHIDA ,  Takaharu KANAI ,  Takako SHIMIZU ,  Yuuki ITOU ,  Atsushi OGAWA ,  Akira TSURUTA ,  Takayuki YUASA ,  Shigeaki MIZUSHIMA

IPC: G09G3/34 ,  G02F1/1333 ,  G02F1/1335 ,  G09G3/36

CPC classification number: G09G3/3413 ,  G02F1/133308 ,  G02F1/133504 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/133536 ,  G02F1/133555 ,  G02F1/1336 ,  G02F1/133621 ,  G02F1/13363 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133548 ,  G02F2001/133557 ,  G02F2001/133616 ,  G02F2001/133638 ,  G02F2413/01 ,  G02F2413/05 ,  G09G3/36 ,  G09G2300/04 ,  G09G2320/0626 ,  G09G2320/0666 ,  G09G2360/144 ,  G09G2360/145

Abstract: The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode. As measured on the viewing side, a brightness of the light emitted from the auxiliary illumination unit is greater than a brightness of the display device when the display device is in a white display state.

Abstract translation: 本发明提供了一种具有改进的设计美观性的镜面显示器，并且使得可以在黑暗环境中充分提高镜面模式下的可视性。 根据本发明的镜子显示器包括具有半透半反镜层的半反射镜板，显示装置，壳体和包括辅助光源的辅助照明单元。 该壳体至少支撑半镜板和显示装置，并且包括当从观看侧的俯视图中观察时覆盖半反射板的前表面的边缘的外框架。 显示装置配置在半反射镜板的后侧。 辅助光源配置在半反射板，显示装置或外框的后侧。 当镜子显示器处于镜像模式时，辅助照明单元与显示设备分离地被控制并且朝向观察侧发光。 如在观察侧所测量的，当显示装置处于白色显示状态时，从辅助照明单元发射的光的亮度大于显示装置的亮度。

公开(公告)号：US20150160804A1

公开(公告)日：2015-06-11

申请号：US14627978

申请日：2015-02-20

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kinya FUJIMOTO ,  Takashi UNOBE ,  Atsushi OGAWA ,  Hiroyuki NAGANUMA ,  Masayuki HIYOSHI

IPC: G06F3/0482 ,  G06F3/0481

CPC classification number: G06F3/0482 ,  G06F3/04817 ,  H04N5/4403 ,  H04N5/44543 ,  H04N5/44582 ,  H04N5/44591 ,  H04N21/41407 ,  H04N21/42224 ,  H04N21/4316 ,  H04N21/482 ,  H04N21/4825 ,  H04N21/4858 ,  H04N21/8113

Abstract: According to a method of the present invention for controlling display of a menu screen, content is displayed in a content display region located in a central part of a display screen in a size smaller than the display screen, and a plurality of icons are displayed in a circle around the content display region so that the plurality of icons sequentially move to a specific position in accordance with a user's selecting operation while moving around the content display region without overlapping the content display region.

Abstract translation: 根据本发明的用于控制菜单画面的显示的方法，将内容以比显示画面小的尺寸显示在位于显示画面的中心部分的内容显示区域中，并将多个图标显示在 围绕内容显示区域的圆圈，使得在不重叠内容显示区域的情况下，在围绕内容显示区域移动的同时，根据用户的选择操作，多个图标顺序地移动到特定位置。

公开(公告)号：US20160254378A1

公开(公告)日：2016-09-01

申请号：US15032398

申请日：2014-09-01

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Yushi INOUE ,  Atsushi OGAWA ,  Nobuyuki ITO ,  Nobuaki TERAGUCHI

IPC: H01L29/778 ,  H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1029 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

Abstract: According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×109 Ωcm. The value of this resistivity ρ is a value derived when the current density is 6.25×10−4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ρ=3.9×109 Ωcm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1×1011 Ωcm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1×107 Ωcm.

Abstract translation: 根据该GaN系HFET，形成栅极绝缘膜的半绝缘膜的电阻率ρ为3.9×10 9Ωcm。 该电阻率ρ的值是当电流密度为6.25×10 -4（A / cm 2）时得到的值。 通过由电阻率ρ= 3.9×109Ωcm的半绝缘膜包含栅极绝缘膜，可以获得1000V的耐受电压。 同时，当栅极绝缘膜的电阻率超过1×1011Ωcm时，耐压突然下降，栅极绝缘膜的电阻率下降到1×107Ωcm以下时，栅极漏电流增加。

公开(公告)号：US20170256407A1

公开(公告)日：2017-09-07

申请号：US15507663

申请日：2015-08-28

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masayuki TAJIRI ,  Nobuyuki ITO ,  Atsushi OGAWA ,  Yohsuke FUJISHIGE ,  Mai OKAZAKI ,  Manabu TOHSAKI

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/205 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L21/02694 ,  C23C16/301 ,  C23C16/303 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: A method for producing a nitride semiconductor stacked body includes: a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace; a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer; and a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on the upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than the band gap of the second nitride semiconductor layer. No interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step.

公开(公告)号：US20170192622A9

公开(公告)日：2017-07-06

申请号：US14627978

申请日：2015-02-20

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kinya FUJIMOTO ,  Takashi UNOBE ,  Atsushi OGAWA ,  Hiroyuki NAGANUMA ,  Masayuki HIYOSHI

IPC: G06F3/0482 ,  G06F3/0481

CPC classification number: G06F3/0482 ,  G06F3/04817 ,  H04N5/4403 ,  H04N5/44543 ,  H04N5/44582 ,  H04N5/44591 ,  H04N21/41407 ,  H04N21/42224 ,  H04N21/4316 ,  H04N21/482 ,  H04N21/4825 ,  H04N21/4858 ,  H04N21/8113

Abstract: According to a method of the present invention for controlling display of a menu screen, content is displayed in a content display region located in a central part of a display screen in a size smaller than the display screen, and a plurality of icons are displayed in a circle around the content display region so that the plurality of icons sequentially move to a specific position in accordance with a user's selecting operation while moving around the content display region without overlapping the content display region.

公开(公告)号：US20160329419A1

公开(公告)日：2016-11-10

申请号：US15100557

申请日：2015-01-06

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Atsushi OGAWA ,  Manabu TOHSAKI ,  Yohsuke FUJISHIGE ,  Nobuyuki ITO ,  Mai OKAZAKI ,  Yushi INOUE ,  Masayuki TAJIRI ,  Nobuaki TERAGUCHI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/04 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7786 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A nitride semiconductor layered body includes a Si substrate having a surface, as the principal surface, inclined at an off-angle of 0 degrees or more and 4.0 degrees or less with respect to a plane and a nitride semiconductor layer disposed on the Si substrate.

Abstract translation: 氮化物半导体层叠体包括具有作为主表面的表面相对于设置在Si衬底上的平面和氮化物半导体层以0度以上且4.0度以下的偏离角度倾斜的Si衬底。