公开(公告)号：US20130256270A1

公开(公告)日：2013-10-03

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Takeharu MOTOKAWA ,  Tokuhisa OOIWA ,  Kensuke DEMURA ,  Tomoaki YOSHIMORI ,  Makoto KARYU ,  Yoshihisa KASE ,  Hidehito AZUMANO

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Abstract translation: 根据一个实施例，等离子体处理装置包括：处理室; 减压部，其构造成在所述处理室内减压; 包括插入到设置在工件的安装侧的凹部中的控制部的构件，所述控制部被构造成能够控制包括所述工件的区域的电容的面内分布和面内分布中的至少一个 工件温度; 设置在处理室内部的安装部; 等离子体产生部，被配置为向用于产生用于对所述工件进行等离子体处理的等离子体的区域提供电磁能; 以及气体供给部，其构造成将处理气体供给到用于产生等离子体的区域。 控制部进行控制，使得电容的平面内分布和温度的面内分布中的至少一个均匀。

公开(公告)号：US20150090296A1

公开(公告)日：2015-04-02

申请号：US14495118

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuji NAGASHIMA ,  Jun MATSUSHITA ,  Konosuke HAYASHI ,  Kunihiro MIYAZAKI ,  Masaaki FURUYA ,  Hidehito AZUMANO ,  Toyoyasu TAUCHI

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67028

Abstract: A substrate processing device 100 includes a solvent replacing unit (organic solvent supply unit 15 and solvent supply unit 34) replacing a cleaning liquid with a volatile solvent of a low concentration, and thereafter further performing replacement with a volatile solvent of a high concentration.

Abstract translation: 基板处理装置100包括用低浓度的挥发性溶剂代替清洗液的溶剂置换单元（有机溶剂供给单元15和溶剂供给单元34），然后进一步用高浓度的挥发性溶剂进行置换。