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公开(公告)号：US20190041752A1
公开(公告)日：2019-02-07
申请号：US16044015
申请日：2018-07-24
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Seiichiro TACHIBANA , Hiroko NAGAI , Daisuke KORI , Tsutomu OGIHARA
IPC: G03F7/11 , G03F7/09 , C09D161/00 , C08G16/02 , G03F7/16
Abstract: The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
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公开(公告)号：US20190391493A1
公开(公告)日：2019-12-26
申请号：US16013728
申请日：2018-06-20
Inventor： Seiichiro TACHIBANA , Takeru WATANABE , Keisuke NIIDA , Hiroko NAGAI , Takashi SAWAMURA , Tsutomu OGIHARA , Alexander Edward HESS , Gregory BREYTA , Daniel Paul SANDERS , Rudy J. WOJTECKI
Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
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Patent Agency Ranking
公开(公告)号：US20190300498A1
公开(公告)日：2019-10-03
申请号：US16293150
申请日：2019-03-05
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Seiichiro TACHIBANA , Takeru WATANABE , Keisuke NIIDA , Hiroko NAGAI , Takashi SAWAMURA , Tsutomu OGIHARA
IPC: C07D335/12 , G03F7/09 , H01L21/027 , H01L21/311
Abstract: A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.
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4.发明申请公开(公告)号：US20180284614A1
公开(公告)日：2018-10-04
申请号：US15915737
申请日：2018-03-08
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Hironori SATOH , Hiroko NAGAI , Takeru WATANABE , Daisuke KORI , Tsutomu OGIHARA
IPC: G03F7/11 , G03F7/09 , H01L21/311 , H01L21/308 , H01L21/266 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , C07C69/94 , C07D251/32 , C07D487/04 , C07C39/14 , C07C39/17 , C08F220/32 , C08F220/28
CPC classification number: G03F7/11 , C07C39/14 , C07C39/17 , C07C69/94 , C07C2603/18 , C07D251/32 , C07D487/04 , C08F220/28 , C08F220/32 , C08F2220/281 , C08F2800/20 , G03F7/091 , G03F7/094 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/322 , G03F7/38 , H01L21/266 , H01L21/3081 , H01L21/3086 , H01L21/31133 , H01L21/31138 , H01L21/31144
Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.
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5.发明申请公开(公告)号：US20190390000A1
公开(公告)日：2019-12-26
申请号：US16013672
申请日：2018-06-20
Inventor： Seiichiro TACHIBANA , Takeru WATANABE , Keisuke NIIDA , Hiroko NAGAI , Takashi SAWAMURA , Tsutomu OGIHARA , Alexander Edward HESS , Gregory BREYTA , Daniel Paul SANDERS , Rudy J. WOJTECKI
Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
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公开(公告)号：US20190041753A1
公开(公告)日：2019-02-07
申请号：US16044159
申请日：2018-07-24
Inventor： Seiichiro TACHIBANA , Tsutomu OGIHARA , Hiroko NAGAI , Romain LALLEMENT , Karen E. PETRILLO
IPC: G03F7/11 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/308 , H01L21/02 , G03F7/09 , C09D161/00 , C08G16/02 , C09D161/34 , C08G14/04 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32
Abstract: The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.
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7.发明申请公开(公告)号：US20180284615A1
公开(公告)日：2018-10-04
申请号：US15915748
申请日：2018-03-08
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor： Hiroko NAGAI , Takeru WATANABE , Daisuke KORI , Tsutomu OGIHARA
IPC: G03F7/11 , G03F7/09 , H01L21/311 , H01L21/308 , H01L21/266 , G03F7/16 , C08F220/32 , C08F220/28 , C07C39/14 , C07C49/83 , C07C39/15 , G03F7/20 , G03F7/38 , G03F7/32
CPC classification number: G03F7/11 , C07C39/14 , C07C39/15 , C07C49/83 , C07C2603/18 , C08F220/28 , C08F220/32 , C08F2220/283 , G03F7/091 , G03F7/094 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/322 , G03F7/38 , H01L21/266 , H01L21/3081 , H01L21/31133 , H01L21/31138 , H01L21/31144
Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
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