公开(公告)号：US20240153771A1

公开(公告)日：2024-05-09

申请号：US18313355

申请日：2023-05-07

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Naoki KOBAYASHI ,  Daisuke KORI ,  Hironori SATOH ,  Toshiharu YANO

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/0332 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02255 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31056 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

Abstract: The present invention is a composition for forming a metal oxide film, including: (A) a metal oxide nanoparticle; (B) a flowability accelerator containing a resin having a structural unit represented by the following general formula (1); (C) a dispersion stabilizer having two or more benzene rings or having one benzene ring and a structure represented by the following general formula (C-1), and the dispersion stabilizer being composed of an aromatic group-containing compound having a molecular weight of 500 or less; and (D) an organic solvent, wherein the flowability accelerator (B) has a content of 9 mass % or more in an entirety of the composition, a ratio Mw/Mn of 2.50≤Mw/Mn≤9.00, and the flowability accelerator (B) having no cardo structure. Thus, there can be provided a composition for forming a metal oxide film that has excellent dry etching resistance compared with a conventional organic underlayer film material, that has excellent filling property compared with a conventional metal hard mask, that can reduce cracking with forming a thick film, and that has excellent storage stability;

公开(公告)号：US20230168585A1

公开(公告)日：2023-06-01

申请号：US17984366

申请日：2022-11-10

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Naoki KOBAYASHI ,  Daisuke KORI ,  Yasuyuki YAMAMOTO ,  Hironori SATOH ,  Toshiharu YANO

IPC: G03F7/09 ,  G03F7/00 ,  G03F7/004 ,  G03F7/008 ,  G03F7/20 ,  G03F7/039

CPC classification number: G03F7/094 ,  G03F7/0035 ,  G03F7/0041 ,  G03F7/008 ,  G03F7/2016 ,  G03F7/039

Abstract: A resist underlayer film material contains (A) a resin having a compound shown in the following general formula (1A), and (B) an organic solvent. Mw/Mn of the compound shown in the general formula (1A) is 1.00≤Mw/Mn≤1.25. This provides: a resist underlayer film material having all of favorable dry etching resistance, heat resistance to 500° C. or higher, and high filling and planarizing properties; and methods for forming a resist underlayer film and patterning processes which use the material.

公开(公告)号：US20250004378A1

公开(公告)日：2025-01-02

申请号：US18732078

申请日：2024-06-03

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Naoki KOBAYASHI ,  Kanata TAKIZAWA ,  Hironori SATOH ,  Shohei IWAMORI ,  Daisuke KORI

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/768

Abstract: The present invention is a pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin and an organic solvent. The resin represented by the following formula (1) is used. This provides: a pattern forming method capable of accurately forming a staircase-shaped pattern by using a composition for forming a resist underlayer film having excellent dry-etching resistance over conventional KrF resists and having excellent film formability and substrate adhesion.

公开(公告)号：US20220107566A1

公开(公告)日：2022-04-07

申请号：US17487150

申请日：2021-09-28

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Daisuke KORI ,  Takashi SAWAMURA ,  Hironori SATOH

IPC: G03F7/11 ,  C07D519/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W1 represents a tetravalent organic group, n1 represents an integer of 0 or 1, n2 represents an integer of 1 to 3, and R1 represents any one or more of the following general formulae (1B). This provides an imide compound, where the compound is cured not only under air, but also under film formation conditions of inert gas, and can form an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formation and adhesion to a substrate, and a material for forming an organic film containing the compound.

公开(公告)号：US20240402606A1

公开(公告)日：2024-12-05

申请号：US18672520

申请日：2024-05-23

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Naoki KOBAYASHI ,  Shohei IWAMORI ,  Daisuke KORI ,  Hironori SATOH

IPC: G03F7/11 ,  C08F12/24 ,  C08F12/32 ,  C08K5/03 ,  C08K5/095 ,  C08K5/12 ,  C08K5/19 ,  C08K5/372 ,  C09D125/18

Abstract: The present invention is a composition for forming a resist underlayer film used for a multilayer resist method contains (A) a resin, (B) a base generator, and (C) an organic solvent, wherein a weight-average molecular weight of (A) the resin is 3,000 to 10,000, (A) the resin is (A-1) a resin containing a phenolic hydroxyl group and a group obtained by modifying a phenolic hydroxyl group, or (A-2) a mixture of a resin containing a phenolic hydroxyl group and a resin containing a group obtained by modifying a phenolic hydroxyl group, and (A) the resin satisfies relations of a+b=1, 0.1≤a≤0.5, and 0.5≤b≤0.9, wherein “a” is a proportion of a phenolic hydroxyl group and “b” is a proportion of a group obtained by modifying a phenolic hydroxyl group contained in (A) the resin. This provides: a composition for forming a resist underlayer film having an excellent filling property and adhesiveness to a substrate, and a patterning process using thereof are to be provided.

公开(公告)号：US20230152695A1

公开(公告)日：2023-05-18

申请号：US17970012

申请日：2022-10-20

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hironori SATOH ,  Daisuke KORI ,  Naoki KOBAYASHI ,  Toshiharu YANO

IPC: G03F7/039 ,  G03F7/38 ,  G03F7/20

CPC classification number: G03F7/039 ,  G03F7/38 ,  G03F7/2016

Abstract: The present invention provides a resist underlayer film material used in a multilayer resist method, the material containing: (A) a resin having a structural unit shown by the following general formula (1); and (B) an organic solvent. The resin content is 20 mass % or more. This provides: a resist underlayer film material having excellent filling property and adhesiveness, and favorable planarizing property; and a patterning process and a method for forming a resist underlayer film which use the material.

公开(公告)号：US20180284614A1

公开(公告)日：2018-10-04

申请号：US15915737

申请日：2018-03-08

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hironori SATOH ,  Hiroko NAGAI ,  Takeru WATANABE ,  Daisuke KORI ,  Tsutomu OGIHARA

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/311 ,  H01L21/308 ,  H01L21/266 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C07C69/94 ,  C07D251/32 ,  C07D487/04 ,  C07C39/14 ,  C07C39/17 ,  C08F220/32 ,  C08F220/28

CPC classification number: G03F7/11 ,  C07C39/14 ,  C07C39/17 ,  C07C69/94 ,  C07C2603/18 ,  C07D251/32 ,  C07D487/04 ,  C08F220/28 ,  C08F220/32 ,  C08F2220/281 ,  C08F2800/20 ,  G03F7/091 ,  G03F7/094 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  H01L21/266 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144

Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.