Method for forming thermal inkjet printhead, thermal inkjet printhead, and semiconductor wafer

    公开(公告)号:US11225080B2

    公开(公告)日:2022-01-18

    申请号:US16333194

    申请日:2016-10-19

    Abstract: The present invention provides a method for forming a thermal inkjet printhead, comprising at least the following steps: providing a semiconductor wafer including an integrated electronic circuit and a section for forming a thermal actuator element, the integrated circuit comprising at least: a thermal insulating layer formed over a substrate; and a first metal layer formed over the thermal insulating layer; wherein the first metal layer extends into the section for forming the thermal actuator element; and etching a section for forming a thermal actuator element to the first metal layer such that the first metal layer is acting as an etch stop layer. Further there is provided a thermal inkjet printhead formed by a method of the present invention and a semiconductor wafer for forming the thermal inkjet printheads by a method of the present invention.

    Method of manufacturing an ink-jet printhead

    公开(公告)号:US10940690B2

    公开(公告)日:2021-03-09

    申请号:US15557354

    申请日:2016-03-10

    Abstract: The present application relates to a method of manufacturing an ink-jet printhead comprising: providing a silicon substrate (10) including active ejecting elements (11); providing a hydraulic structure layer (20) for defining hydraulic circuits configured to enable a guided flow of ink; providing a silicon orifice plate (30) having a plurality of nozzles (31) for ejection of the ink; assembling the silicon substrate (10) with the hydraulic structure layer (20) and the silicon orifice plate (30); wherein providing the silicon orifice plate (30) comprises: providing a silicon wafer (40) having a planar extension delimited by a first surface (41) and a second surface (42) on opposite sides of the silicon wafer (40); performing a thinning step at the second surface (42) so as to remove from the second surface (42) a central portion (43) having a preset height (H), the silicon wafer (40) being formed, following the thinning step, by a base portion (44) having a planar extension and a peripheral portion (45) extending from the base portion (44), transversally with respect to the planar extension of the base portion (44); and forming in the silicon wafer (40) a plurality of through holes, each defining a respective nozzle (31) for ejection of the ink. The method according to the present invention is characterized in that the silicon wafer (40) is a silicon-on-insulator wafer, wherein the silicon-on-insulator wafer comprises a silicon device layer (38) adjacent to the first surface (41), a silicon handle layer (37) adjacent to the second surface (42) and an insulator layer (39) in-between.

Patent Agency Ranking