公开(公告)号：US20230407135A1

公开(公告)日：2023-12-21

申请号：US18331193

申请日：2023-06-08

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Kang Sik MYUNG ,  Han Teo PARK ,  Hyeong Ju LEE ,  Yong Soo CHOI

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/76898 ,  H01L21/7684 ,  H01L21/76819 ,  H01L21/3212 ,  H01L21/31053

Abstract: A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.