公开(公告)号：US20230332016A1

公开(公告)日：2023-10-19

申请号：US18297152

申请日：2023-04-07

申请人： SK enpulse Co., Ltd.

发明人： Deok Su HAN ,  Seung Chul HONG ,  Han Teo PARK ,  Hwan Chul KIM ,  Hyeong Ju LEE

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC分类号： C09G1/02 ,  C09K3/1436 ,  H01L21/30625

摘要： A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.

公开(公告)号：US20230407135A1

公开(公告)日：2023-12-21

申请号：US18331193

申请日：2023-06-08

申请人： SK enpulse Co., Ltd.

发明人： Seung Chul HONG ,  Deok Su HAN ,  Kang Sik MYUNG ,  Han Teo PARK ,  Hyeong Ju LEE ,  Yong Soo CHOI

IPC分类号： C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

CPC分类号： C09G1/02 ,  H01L21/76898 ,  H01L21/7684 ,  H01L21/76819 ,  H01L21/3212 ,  H01L21/31053

摘要： A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.