公开(公告)号：US09536846B2

公开(公告)日：2017-01-03

申请号：US14526073

申请日：2014-10-28

Applicant: SK hynix Inc.

Inventor： Jin Woo Park ,  Sung Su Park ,  Bae Yong Kim

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L21/683

CPC classification number: H01L24/05 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/051 ,  H01L2224/05138 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/119 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01014 ,  H01L2924/012

Abstract: A semiconductor device includes a chip body having an uneven surface including at least two regions at different levels from one another, a through electrode penetrating the chip body and having an end which is exposed by the uneven surface of the chip body, a passivation layer disposed on the uneven surface of the chip body, and a bump disposed on the passivation layer and the exposed end of the through electrode and overlapping with the uneven surface of the chip body.

Abstract translation: 一种半导体器件包括：芯片本体，具有包括彼此不同的至少两个区域的不平坦表面;穿透芯片本体并具有由芯片体的不平坦表面露出的端部的贯通电极，设置有钝化层 并且设置在钝化层和通孔的露出端上并与芯片体的不平坦表面重叠的凸起。