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公开(公告)号：US09473076B2
公开(公告)日：2016-10-18
申请号：US14534886
申请日：2014-11-06
发明人： Jianxing Ni , Michael Lynn Gerard , Ramanan Bairavasubramanian , Dwayne Allen Rowland , Matthew Lee Banowetz
CPC分类号： H03F1/32 , H03F3/19 , H03F3/191 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/451 , H03F2201/3215 , H03F2203/21127 , H03F2203/21145
摘要： Improved linearity performance for multi-mode power amplifiers. A power amplifier (PA) assembly can include a radio-frequency (RF) amplification path having a first stage and a second stage, with each stage including a transistor. The PA assembly can further include a biasing circuit having a first bias path between a supply node and the base of a corresponding transistor. The PA assembly can further include a linearizing circuit implemented as either or both of a second bias path and a coupling path relative to the first bias path. The second bias path can be configured to provide an additional base bias current to the base under a selected condition. The coupling path can be configured to improve linearity of the corresponding transistor operating in a first mode while allowing a ballast resistance to be sufficiently robust for the corresponding transistor operating in a second mode.
摘要翻译： 改进了多模功率放大器的线性性能。 功率放大器（PA）组件可以包括具有第一级和第二级的射频（RF）放大路径，每级包括晶体管。 PA组件还可以包括偏置电路，该偏置电路在供电节点和相应晶体管的基极之间具有第一偏置路径。 PA组件还可以包括实现为相对于第一偏置路径的第二偏置路径和耦合路径中的任一个或两者的线性化电路。 第二偏置路径可以被配置为在所选择的条件下向基座提供额外的基极偏置电流。 耦合路径可以被配置为改善以第一模式工作的相应晶体管的线性度，同时允许镇流电阻对于在第二模式中工作的相应晶体管足够稳健。
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公开(公告)号：US09634619B2
公开(公告)日：2017-04-25
申请号：US14531967
申请日：2014-11-03
CPC分类号： H03F1/0205 , H01L23/66 , H01L2223/6611 , H01L2223/665 , H01L2223/6655 , H01L2224/05554 , H01L2224/48227 , H01L2224/49171 , H03F1/0261 , H03F1/32 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H03F2200/555 , H04B1/40
摘要： Improved power amplifier (PA) bias circuit having parallel emitter follower. In some embodiments, a bias circuit for a PA can include a first bias path implemented to couple a base node of an amplifying transistor and a supply node, with the first bias path being configured to provide a base bias current to the base node. The PA can further include a second bias path implemented to be electrically parallel with the first bias path between the base node and the supply node. The second bias path can be configured to provide an additional base bias current to the base node under a selected condition.
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3.发明授权Systems, circuits and methods related to low power efficiency improvement in multi-mode multi-band power amplifiers 有权与多模式多波段功率放大器的低功率效率改进相关的系统，电路和方法公开(公告)号：US09590569B2
公开(公告)日：2017-03-07
申请号：US14704890
申请日：2015-05-05
CPC分类号： H03F1/56 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/108 , H03F2200/111 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/421 , H03F2200/451 , H03F2200/54 , H03F2203/21109 , H03F2203/21145 , H03F2203/21175
摘要： Systems, circuits and methods related to low power efficiency improvement in multi-mode multi-band power amplifiers. In some embodiments, a power-amplifier (PA) system can include a first amplification path having one or more PAs configured to generate a high power radio-frequency (RF) signal from an input RF signal when in a high power mode. The PA system can further include a second amplification path having one or more PAs configured to generate a low power RF signal from the input RF signal when in a low power mode. The PA system can further include a switching circuit coupled to the first amplification path and the second amplification path. The switching circuit can be configured to allow amplification of the input RF signal through the first amplification path in the high power mode or the second amplification path in the low power mode.
摘要翻译： 与多模式多波段功率放大器的低功率效率改进相关的系统，电路和方法。 在一些实施例中，功率放大器（PA）系统可以包括具有一个或多个PA的第一放大路径，其被配置为当处于高功率模式时从输入RF信号产生高功率射频（RF）信号。 PA系统还可以包括具有一个或多个PA的第二放大路径，其被配置成当处于低功率模式时从输入RF信号产生低功率RF信号。 PA系统还可以包括耦合到第一放大路径和第二放大路径的开关电路。 开关电路可以被配置为允许在低功率模式下通过高功率模式或第二放大路径中的第一放大路径放大输入RF信号。
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公开(公告)号：US09935588B2
公开(公告)日：2018-04-03
申请号：US15296007
申请日：2016-10-17
发明人： Jianxing Ni , Michael Lynn Gerard , Ramanan Bairavasubramanian , Dwayne Allen Rowland , Matthew Lee Banowetz
CPC分类号： H03F1/32 , H03F3/19 , H03F3/191 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/451 , H03F2201/3215 , H03F2203/21127 , H03F2203/21145
摘要： Circuits, devices and methods related to multi-mode power amplifiers. A power amplifier (PA) assembly can include a radio-frequency (RF) amplification path having a first stage and a second stage, with each stage including a transistor. The PA assembly can further include a biasing circuit having a first bias path between a supply node and the base of a corresponding transistor. The PA assembly can further include a linearizing circuit implemented as either or both of a second bias path and a coupling path relative to the first bias path. The second bias path can be configured to provide an additional base bias current to the base under a selected condition. The coupling path can be configured to improve linearity of the corresponding transistor operating in a first mode while allowing a ballast resistance to be sufficiently robust for the corresponding transistor operating in a second mode.
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公开(公告)号：US09774307B2
公开(公告)日：2017-09-26
申请号：US15231710
申请日：2016-08-08
CPC分类号： H03F3/245 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/68 , H03F2200/18 , H03F2200/222 , H03F2200/27 , H03F2200/372 , H03F2200/387 , H03F2200/414 , H03F2200/451 , H03F2200/555 , H04B7/2631 , H04W88/06
摘要： Power amplifier having biasing with selectable bandwidth. In some embodiments, a power amplifier can include an amplifying transistor having a base for receiving a signal to be amplified, and a bias circuit configured to bias the amplifying transistor. The bias circuit can include a reference transistor having a base coupled to the base of the amplifying transistor and a collector coupled to a reference current source. The bias circuit can further include a coupling circuit that couples the collector and the base of the reference transistor. The coupling circuit can include a switchable element configured to allow the coupling circuit to be in a first state to provide a first bandwidth for the bias circuit or a second state to provide a second bandwidth for the bias circuit.
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公开(公告)号：US09413313B2
公开(公告)日：2016-08-09
申请号：US14481561
申请日：2014-09-09
CPC分类号： H03F3/245 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/68 , H03F2200/18 , H03F2200/222 , H03F2200/27 , H03F2200/372 , H03F2200/387 , H03F2200/414 , H03F2200/451 , H03F2200/555 , H04B7/2631 , H04W88/06
摘要： Multimode power amplifier bias circuit with selectable bandwidth. In some embodiments, a bias circuit for a power amplifier can include a first bipolar junction transistor (BJT) configured to pass a reference current. The first BJT can be coupled with a second BJT that performs at least some amplification for the power amplifier. The first and second BJTs can be configured as a current mirror. The bias circuit can further include a coupling circuit that couples the collector and the base of the first BJT. The coupling circuit can include a switchable element to allow the coupling circuit to be in a first state or a second state. The first state can be configured to yield a first bandwidth for the bias circuit, and the second state can be configured to yield a second bandwidth for the bias circuit.
摘要翻译： 具有可选带宽的多模功率放大器偏置电路。 在一些实施例中，用于功率放大器的偏置电路可以包括被配置为传递参考电流的第一双极结型晶体管（BJT）。 第一个BJT可以与对功率放大器执行至少一些放大的第二个BJT耦合。 第一和第二BJT可以配置为电流镜。 偏置电路还可以包括耦合第一BJT的集电极和基极的耦合电路。 耦合电路可以包括允许耦合电路处于第一状态或第二状态的可切换元件。 第一状态可以被配置为产生用于偏置电路的第一带宽，并且第二状态可以被配置为产生用于偏置电路的第二带宽。
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