公开(公告)号：US09230848B2

公开(公告)日：2016-01-05

申请号：US13629093

申请日：2012-09-27

Applicant: Soitec

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/30 ,  H01L21/762 ,  H01L29/06 ,  H01L21/3105

CPC classification number: H01L21/76254 ,  H01L21/3105 ,  H01L21/7624 ,  H01L21/76251 ,  H01L29/06

Abstract: Embodiments of the invention relate to a process for fabricating a silicon-on-insulator structure comprising the following steps: providing a donor substrate and a support substrate, only one of the substrates being covered with an oxide layer; forming, in the donor substrate, a weak zone; plasma activating the oxide layer; bonding the donor substrate to the support substrate in a partial vacuum; implementing a bond-strengthening anneal at a temperature of 350° C. or less causing the donor substrate to cleave along the weak zone; and carrying out a heat treatment at a temperature above 900° C. A transition from the temperature of the bond-strengthening anneal to the temperature of the heat treatment may be achieved at a ramp rate above 10° C./s.

Abstract translation: 本发明的实施例涉及一种用于制造绝缘体上硅结构的方法，包括以下步骤：提供施主衬底和支撑衬底，只有一个衬底被氧化物层覆盖; 在施主衬底中形成弱区; 等离子体激活氧化层; 在部分真空中将施主衬底结合到支撑衬底; 在350℃或更低的温度下进行结合强化退火，导致供体基体沿弱区裂开; 并在高于900℃的温度下进行热处理。从加强退火的温度到热处理的温度的转变可以以高于10℃/秒的斜率进行。

公开(公告)号：US08962450B2

公开(公告)日：2015-02-24

申请号：US14049263

申请日：2013-10-09

Applicant: Soitec

Inventor： Patrick Reynaud ,  Sébastien Kerdiles ,  Daniel Delprat

IPC: H01L21/78 ,  H01L21/762

CPC classification number: H01L27/1203 ,  H01L21/76254 ,  H01L29/0649

Abstract: A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.

Abstract translation: 一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层 。 该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在结构上进行至少一个长的热稳定化至少10分钟。

公开(公告)号：US08728913B2

公开(公告)日：2014-05-20

申请号：US13933779

申请日：2013-07-02

Applicant: Soitec

Inventor： Sébastien Kerdiles ,  Walter Schwarzenbach ,  Aziz Alami-Idrissi

IPC: H01L21/30 ,  H01L21/78

CPC classification number: H01L21/30625 ,  H01L21/02032 ,  H01L21/76254

Abstract: The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions that are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Abstract translation: 本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。 为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在拆卸发生之前执行附加的蚀刻工艺。

公开(公告)号：US08691662B2

公开(公告)日：2014-04-08

申请号：US13827618

申请日：2013-03-14

Applicant: Soitec

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/46

CPC classification number: H01L21/02 ,  H01L21/76254

Abstract: A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2, respectively, wherein T1 is less than or equal to T2, T1 is between 1200° C. and 1300° C., T2 is between 1240° C. and 1300° C., and when T1 is below 1240° C., then T2 is above 1240° C.

Abstract translation: 一种用于制造绝缘体上硅结构的方法包括在硅供体衬底上形成第一氧化物层，在支撑衬底上形成第二氧化物层，并在供体衬底中形成弱化区。 施主衬底通过在硅供体衬底上的第一氧化物层和支撑衬底上的第二氧化物层之间建立直接接触并在其间建立直接的氧化物 - 氧化物键而与支撑衬底结合。 施主衬底沿着弱化区分裂以形成绝缘体上硅结构，并且绝缘体上硅结构分别在温度T1和T2进行两次连续的快速热退火处理，其中T1小于或等于 等于T2，T1在1200℃和1300℃之间，T2在1240℃和1300℃之间，当T1低于1240℃时，则T2高于1240℃。

公开(公告)号：US20130295696A1

公开(公告)日：2013-11-07

申请号：US13933779

申请日：2013-07-02

Applicant: Soitec

Inventor： Sébastien Kerdiles ,  Walter Schwarzenbach ,  Aziz Alami-Idrissi

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/02032 ,  H01L21/76254

Abstract: The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.

Abstract translation: 本发明涉及一种用于将层从施主衬底转移到手柄衬底上的方法，其中，在剥离之后，再次使用剩余的施主衬底。 为了摆脱由于基板的倒角几何形状引起的不期望的突出边缘区域，本发明提出在分离发生之前执行附加的蚀刻工艺。

公开(公告)号：US20130273712A1

公开(公告)日：2013-10-17

申请号：US13827618

申请日：2013-03-14

Applicant: SOITEC

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01L21/76254

Abstract: A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2 respectively, wherein T1 is less than or equal to T2, T1 is between 1200° C. and 1300° C., T2 is between 1240° C. and 1300° C., and when T1 is below 1240° C., then T2 is above 1240° C.

Abstract translation: 一种用于制造绝缘体上硅结构的方法包括在硅供体衬底上形成第一氧化物层，在支撑衬底上形成第二氧化物层，并在供体衬底中形成弱化区。 施主衬底通过在硅供体衬底上的第一氧化物层和支撑衬底上的第二氧化物层之间建立直接接触并在其间建立直接的氧化物 - 氧化物键而与支撑衬底结合。 施主衬底沿着弱化区分裂以形成绝缘体上硅结构，并且绝缘体上硅结构分别在温度T1和T2下进行两次连续的快速热退火处理，其中T1小于或等于 到T2时，T1在1200℃和1300℃之间，T2在1240℃和1300℃之间，当T1低于1240℃时，则T2高于1240℃。

公开(公告)号：US20130207244A1

公开(公告)日：2013-08-15

申请号：US13629093

申请日：2012-09-27

Applicant: SOITEC

Inventor： Carole David ,  Sébastien Kerdiles

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/3105 ,  H01L21/7624 ,  H01L21/76251 ,  H01L29/06

Abstract: Embodiments of to invention relate to a process for fabricating a silicon-on-insulator structure comprising the following steps: providing a donor substrate and a support substrate, only one of the substrates being covered with an oxide layer; forming, in the donor substrate, a weak zone; plasma activating the oxide layer; bonding the donor substrate to the support substrate in a partial vacuum; implementing a bond-strengthening anneal at a temperature of 350° C. or less causing the donor substrate to cleave along the weak zone; and carrying out a heat treatment at a temperature above 900° C. A transition from the temperature of the bond-strengthening anneal to the temperature of the heat treatment may be achieved at a ramp rate above 10° C./s.

Abstract translation: 本发明的实施例涉及一种用于制造绝缘体上硅结构的方法，包括以下步骤：提供施主衬底和支撑衬底，只有一个衬底被氧化物层覆盖; 在施主衬底中形成弱区; 等离子体激活氧化层; 在部分真空中将施主衬底结合到支撑衬底; 在350℃或更低的温度下进行结合强化退火，导致供体基体沿弱区裂开; 并在高于900℃的温度下进行热处理。从加强退火的温度到热处理的温度的转变可以以高于10℃/秒的斜率进行。