公开(公告)号：US20190252568A1

公开(公告)日：2019-08-15

申请号：US16276432

申请日：2019-02-14

申请人： SOLAR JUNCTION CORPORATION

发明人： TING LIU ,  FERRAN SUAREZ ,  ARSEN SUKIASYAN ,  AYMERIC MAROS

IPC分类号： H01L31/078 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/078 ,  H01L31/03048 ,  H01L31/0352 ,  H01L31/0687 ,  H01L31/18 ,  H01L31/1864

摘要： Semiconductor devices having a high-temperature barrier layer between a III-V material and an underlying substrate are disclosed. The high-temperature barrier layer can minimize or prevent diffusion of arsenic and phosphorous from an overlying layer into the underlying substrate. Dilute nitride-containing multijunction photovoltaic cells incorporating a high-temperature barrier layer exhibit high efficiency.

公开(公告)号：US20160118526A1

公开(公告)日：2016-04-28

申请号：US14935145

申请日：2015-11-06

申请人： SOLAR JUNCTION CORPORATION

发明人： PRANOB MISRA ,  REBECCA ELIZABETH JONES-ALBERTUS ,  TING LIU ,  ILYA FUSHMAN ,  HOMAN B. YUEN

IPC分类号： H01L31/0735 ,  H01L31/18 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/0304

CPC分类号： H01L31/0735 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544

摘要： A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.

摘要翻译： 具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂，从而控制太阳能电池的载流能力。 具体地说，公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。 在一个实施例中，晶格匹配多结太阳能电池具有上部子电池，中间子电池和下部稀的氮化物子电池，下部稀土氮化物子电池在基极和/或发射极中具有掺杂， 至少部分地指数地掺杂，以便改善其太阳能电池性能特征。 在构造中，稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配，中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。

公开(公告)号：US20170110607A1

公开(公告)日：2017-04-20

申请号：US15391659

申请日：2016-12-27

申请人： SOLAR JUNCTION CORPORATION

发明人： REBECCA ELIZABETH JONES-ALBERTUS ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/18 ,  C30B23/06 ,  C30B23/02 ,  C30B33/02 ,  H01L31/0725 ,  C30B29/40

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

公开(公告)号：US20150214412A1

公开(公告)日：2015-07-30

申请号：US14678737

申请日：2015-04-03

申请人： SOLAR JUNCTION CORPORATION

发明人： Rebecca Elizabeth Jones-Albertus ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0735 ,  C22C28/00 ,  C22C30/00 ,  H01L31/0304 ,  H01L31/0725

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07＆nlE; x＆nlE; 0.18,0.025＆amp; nlE; y＆nlE; 0.04和0.001＆amp; nlE; z＆nlE; 0.03。

公开(公告)号：US20150122318A1

公开(公告)日：2015-05-07

申请号：US14597621

申请日：2015-01-15

申请人： SOLAR JUNCTION CORPORATION

发明人： REBECCA ELIZABETH JONES-ALBERTUS ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0725

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≧x≧0.18, 0.025≧y≧0.04 and 0.001≧z≧0.03.

摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07≥x≥0.18,0.025≥y≥0.04且0.001≥Z≥0.03。

公开(公告)号：US20170338357A1

公开(公告)日：2017-11-23

申请号：US15595391

申请日：2017-05-15

申请人： SOLAR JUNCTION CORPORATION

发明人： TING LIU ,  PRANOB MISRA ,  HOMAN BERNARD YUEN ,  REBECCA ELIZABETH JONES-ALBERTUS

IPC分类号： H01L31/0304 ,  H01L31/0725 ,  H01L31/0735

CPC分类号： H01L31/03044 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  Y02E10/544

摘要： Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.

公开(公告)号：US20130220409A1

公开(公告)日：2013-08-29

申请号：US13854740

申请日：2013-04-01

申请人： SOLAR JUNCTION CORPORATION

发明人： REBECCA ELIZABETH JONES-ALBERTUS ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0304

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1−xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1−xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07 @ x @ 0.18,0.025 @ y @ 0.04和0.001 @ z @ 0.03。

公开(公告)号：US20190288147A1

公开(公告)日：2019-09-19

申请号：US16431521

申请日：2019-06-04

申请人： SOLAR JUNCTION CORPORATION

发明人： PRANOB MISRA ,  REBECCA ELIZABETH JONES-ALBERTUS ,  TING LIU ,  ILYA FUSHMAN ,  HOMAN B. YUEN

IPC分类号： H01L31/0735 ,  H01L31/18 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/065

摘要： Dilute nitride optical absorber materials having graded doping profiles are disclosed. The materials can be used in photodetectors and photovoltaic cells. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.

公开(公告)号：US20190189826A1

公开(公告)日：2019-06-20

申请号：US16282762

申请日：2019-02-22

申请人： SOLAR JUNCTION CORPORATION

发明人： FERRAN SUAREZ ,  TING LIU ,  HOMAN B. YUEN ,  DAVID TANER BILIR ,  ARSEN SUKIASYAN ,  JORDAN LANG

IPC分类号： H01L31/0725 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/0304

CPC分类号： H01L31/0725 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0735 ,  Y02E10/544

摘要： Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

公开(公告)号：US20190013429A1

公开(公告)日：2019-01-10

申请号：US16018917

申请日：2018-06-26

申请人： SOLAR JUNCTION CORPORATION

发明人： FERRAN SUAREZ ,  TING LIU ,  ARSEN SUKIASYAN ,  IVAN HERNANDEZ ,  JORDAN LANG ,  RADEK ROUCKA ,  SABEUR SIALA ,  AYMERIC MAROS

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/20 ,  H01L31/18

摘要： Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.