公开(公告)号：US09530812B2

公开(公告)日：2016-12-27

申请号：US15087695

申请日：2016-03-31

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L31/00 ,  H01L29/40 ,  H01L27/146 ,  H04N5/225 ,  H04N5/374

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US09319569B2

公开(公告)日：2016-04-19

申请号：US14834010

申请日：2015-08-24

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L21/00 ,  H01L23/52 ,  H04N5/225 ,  H01L27/146 ,  H04N5/374

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US20200152685A1

公开(公告)日：2020-05-14

申请号：US16746188

申请日：2020-01-17

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hitoshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/225 ,  H04N5/369 ,  H01L23/48 ,  H01L21/768

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US10403670B2

公开(公告)日：2019-09-03

申请号：US15814177

申请日：2017-11-15

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H04N5/225 ,  H04N5/374 ,  H01L21/768 ,  H01L23/48 ,  H04N5/369

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US20170092681A1

公开(公告)日：2017-03-30

申请号：US15374864

申请日：2016-12-09

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US09524925B2

公开(公告)日：2016-12-20

申请号：US15097093

申请日：2016-04-12

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L27/146

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括：第一半导体基底基板，接合到第一半导体基底基板的第一表面侧上的第二半导体基底基板，形成为从第二表面侧穿透的通孔 第一半导体基底基板的第二半导体基底基板上的布线层，以及围绕形成在第一半导体基板的内部的贯通电极的周围的绝缘层。

公开(公告)号：US11764243B2

公开(公告)日：2023-09-19

申请号：US17110145

申请日：2020-12-02

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H04N23/00 ,  H04N25/76 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1464 ,  H01L27/1469 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H04N23/00 ,  H04N25/76 ,  H04N25/79 ,  H01L2224/11

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US11721716B2

公开(公告)日：2023-08-08

申请号：US17110145

申请日：2020-12-02

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H04N23/00 ,  H04N25/76 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1464 ,  H01L27/1469 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H04N23/00 ,  H04N25/76 ,  H04N25/79 ,  H01L2224/11

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US10950647B2

公开(公告)日：2021-03-16

申请号：US16913075

申请日：2020-06-26

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H01L31/14 ,  H01L21/768 ,  H01L23/48 ,  H04N5/369 ,  H04N5/225 ,  H04N5/374

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

公开(公告)号：US20190214425A1

公开(公告)日：2019-07-11

申请号：US16358348

申请日：2019-03-19

Applicant: Sony Corporation

Inventor： Taku Umebayashi ,  Hiroshi Takahashi ,  Reijiroh Shohji

IPC: H01L27/146 ,  H04N5/225 ,  H01L23/48 ,  H01L21/768 ,  H04N5/369 ,  H04N5/374

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/11 ,  H04N5/225 ,  H04N5/374 ,  H04N5/379

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.