公开(公告)号：US11024658B2

公开(公告)日：2021-06-01

申请号：US16807049

申请日：2020-03-02

申请人： SONY CORPORATION

发明人： Atsushi Yamamoto ,  Shinji Miyazawa ,  Yutaka Ooka ,  Kensaku Maeda ,  Yusuke Moriya ,  Naoki Ogawa ,  Nobutoshi Fujii ,  Shunsuke Furuse ,  Masaya Nagata ,  Yuichi Yamamoto

IPC分类号： H01L27/00 ,  H01L31/00 ,  H01L27/146 ,  H01L31/0203

摘要： The present technology relates to techniques of preventing intrusion of moisture into a chip.
Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

公开(公告)号：US10032816B2

公开(公告)日：2018-07-24

申请号：US15015984

申请日：2016-02-04

申请人： SONY CORPORATION

发明人： Shinji Miyazawa ,  Yutaka Ooka

IPC分类号： H01L27/00 ,  H01L27/146

摘要： There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

公开(公告)号：US09728568B2

公开(公告)日：2017-08-08

申请号：US14773820

申请日：2014-03-07

申请人： SONY CORPORATION

发明人： Takaaki Hirano ,  Shinji Miyazawa ,  Kensaku Maeda ,  Yusuke Moriya ,  Shunsuke Furuse ,  Yutaka Ooka

IPC分类号： H04N5/374 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374

摘要： Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

公开(公告)号：US09524925B2

公开(公告)日：2016-12-20

申请号：US15097093

申请日：2016-04-12

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L27/146

CPC分类号： H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括：第一半导体基底基板，接合到第一半导体基底基板的第一表面侧上的第二半导体基底基板，形成为从第二表面侧穿透的通孔 第一半导体基底基板的第二半导体基底基板上的布线层，以及围绕形成在第一半导体基板的内部的贯通电极的周围的绝缘层。

公开(公告)号：US11037975B2

公开(公告)日：2021-06-15

申请号：US16389052

申请日：2019-04-19

申请人： SONY CORPORATION

发明人： Takaaki Hirano ,  Shinji Miyazawa ,  Kensaku Maeda ,  Yusuke Moriya ,  Shunsuke Furuse ,  Yutaka Ooka

IPC分类号： H01L27/146 ,  H04N5/374

摘要： Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

公开(公告)号：US09941318B2

公开(公告)日：2018-04-10

申请号：US15621871

申请日：2017-06-13

申请人： SONY CORPORATION

发明人： Takaaki Hirano ,  Shinji Miyazawa ,  Kensaku Maeda ,  Yusuke Moriya ,  Shunsuke Furuse ,  Yutaka Ooka

IPC分类号： H01L27/146 ,  H04N5/374

CPC分类号： H01L27/14627 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374

摘要： Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

公开(公告)号：US09812479B2

公开(公告)日：2017-11-07

申请号：US15476554

申请日：2017-03-31

申请人： SONY CORPORATION

发明人： Shinji Miyazawa ,  Yutaka Ooka

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685

摘要： There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

公开(公告)号：US09105774B2

公开(公告)日：2015-08-11

申请号：US13861024

申请日：2013-04-11

申请人： Sony Corporation

发明人： Yutaka Ooka

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L31/02327 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A manufacturing method of a solid-state imaging device includes: preparing a photoelectric conversion device; forming an insulating layer on a surface of the photoelectric conversion device; forming a wire-grid polarizer on a support base; bonding a forming surface of the wire-grid polarizer on the support base to the insulating layer on the surface of the photoelectric conversion device and removing the support base from the wire-grid polarizer.

摘要翻译： 固态成像装置的制造方法包括：准备光电转换装置; 在所述光电转换装置的表面上形成绝缘层; 在支撑基座上形成线栅偏振器; 将支撑基底上的线栅偏振器的形成表面接合到光电转换装置的表面上的绝缘层，并从线栅偏振器移除支撑基底。

公开(公告)号：US11581346B2

公开(公告)日：2023-02-14

申请号：US16874442

申请日：2020-05-14

申请人： SONY CORPORATION

发明人： Shinji Miyazawa ,  Yutaka Ooka

IPC分类号： H01L27/146

摘要： There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

公开(公告)号：US11063020B2

公开(公告)日：2021-07-13

申请号：US16521215

申请日：2019-07-24

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC分类号： H01L25/065 ,  H01L21/768 ,  H01L27/146 ,  H01L23/48 ,  H01L21/306 ,  H01L25/00 ,  H01L21/311 ,  H01L23/00

摘要： There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.