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公开(公告)号：US20240096914A1
公开(公告)日：2024-03-21
申请号：US18523054
申请日：2023-11-29
发明人： Akira FURUKAWA , Yoshihiro ANDO , Hideaki TOGASHI , Fumihiko KOGA
CPC分类号： H01L27/14614 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H04N23/45 , H04N23/55 , H10K30/30 , H10K30/81 , H10K39/32 , Y02E10/549
摘要： Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.
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公开(公告)号：US20240145517A1
公开(公告)日：2024-05-02
申请号：US18545270
申请日：2023-12-19
发明人： Kenichi MURATA , Masahiro JOEI , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Shingo TAKAHASHI
IPC分类号： H01L27/146 , H04N25/76
CPC分类号： H01L27/14643 , H01L27/14623 , H04N25/76
摘要： Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.
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公开(公告)号：US20220336521A1
公开(公告)日：2022-10-20
申请号：US17733809
申请日：2022-04-29
发明人： Hideaki TOGASHI , Fumihiko KOGA , Tetsuji YAMAGUCHI , Shintarou HIRATA , Taiichiro WATANABE , Yoshihiro ANDO , Toyotaka KATAOKA , Satoshi KEINO , Yukio KANEDA
IPC分类号： H01L27/148 , H01L27/30 , H01L27/146 , H01L51/42 , H01L51/44
摘要： An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
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公开(公告)号：US20240313013A1
公开(公告)日：2024-09-19
申请号：US18676161
申请日：2024-05-28
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO
IPC分类号： H01L27/146 , H01L29/41 , H04N25/771 , H10K39/32
CPC分类号： H01L27/14612 , H01L27/14636 , H01L27/14685 , H01L29/41 , H04N25/771 , H10K39/32
摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.
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公开(公告)号：US20220415969A1
公开(公告)日：2022-12-29
申请号：US17778227
申请日：2020-11-12
发明人： Masahiro JOEI , Kenichi MURATA , Fumihiko KOGA , Iwao YAGI , Shintarou HIRATA , Hideaki TOGASHI , Yosuke SAITO , Nobutoshi FUJII
摘要： A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.
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公开(公告)号：US20220093660A1
公开(公告)日：2022-03-24
申请号：US17539956
申请日：2021-12-01
发明人： Akira FURUKAWA , Yoshihiro ANDO , Hideaki TOGASHI , Fumihiko KOGA
IPC分类号： H01L27/146 , H04N5/225
摘要： Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.
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公开(公告)号：US20240260285A1
公开(公告)日：2024-08-01
申请号：US18630800
申请日：2024-04-09
发明人： Hideaki TOGASHI , Iwao YAGI , Masahiro JOEI , Fumihiko KOGA , Kenichi MURATA , Shintarou HIRATA , Yosuke SAITO , Akira FURUKAWA
IPC分类号： H10K39/32
CPC分类号： H10K39/32
摘要： There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor including a stacked structure that includes a semiconductor substrate, a first photoelectric converter provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode a photoelectric conversion film, and a readout electrode are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.
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8.发明公开公开(公告)号：US20240047490A1
公开(公告)日：2024-02-08
申请号：US18490465
申请日：2023-10-19
IPC分类号： H01L27/146 , G01J1/44
CPC分类号： H01L27/14614 , H01L27/14612 , H01L27/14641 , H01L27/14638 , H01L27/1464 , G01J1/44 , H01L27/14643 , H01L27/14689 , H01L27/1461 , H01L27/14636 , H01L27/14645 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14647 , G01J2001/448
摘要： There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.
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公开(公告)号：US20220352222A1
公开(公告)日：2022-11-03
申请号：US17751331
申请日：2022-05-23
IPC分类号： H01L27/146 , G01J1/44
摘要： There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.
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