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公开(公告)号:US20210317592A1
公开(公告)日:2021-10-14
申请号:US17357406
申请日:2021-06-24
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor: JOHN MACNEIL , MARTIN AYRES , TREVOR THOMAS
IPC: C25D17/00 , H01L21/67 , C25D17/06 , H01L21/677 , H01L21/687
Abstract: A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.
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公开(公告)号:US20180211856A1
公开(公告)日:2018-07-26
申请号:US15876300
申请日:2018-01-22
Applicant: SPTS Technologies Limited
Inventor: JOHN MACNEIL , MARTIN AYRES , TREVOR THOMAS
IPC: H01L21/67 , H01L21/677 , H01L21/687 , C25D17/00 , C25D17/06
CPC classification number: H01L21/67196 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/2885 , H01L21/67178 , H01L21/6719 , H01L21/6723 , H01L21/67766 , H01L21/67769 , H01L21/67778 , H01L21/68707
Abstract: An apparatus for processing a front face of a semiconductor wafer is provided. The apparatus includes a main chamber, at least one loading port connected to the main chamber for introducing the wafer to the main chamber, at least one stack of wafer processing modules, and a transfer mechanism for transferring the wafer between the loading port and the processing modules. The at least one stack of wafer processing modules includes three or more substantially vertically stacked wafer processing modules, wherein adjacent wafer processing modules in the stack have a vertical separation of less than 50 cm, and each processing module is configured to process the wafer when disposed substantially horizontally therein with the front face of the wafer facing upwards, and at least one wafer processing module is an electrochemical wafer processing module.
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公开(公告)号:US20130186857A1
公开(公告)日:2013-07-25
申请号:US13773711
申请日:2013-02-22
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor: CARL DAVID M. BRANCHER , JOHN MACNEIL , ROBERT KENNETH TROWELL
IPC: B44C1/22 , C23C16/455
CPC classification number: H01L21/306 , B44C1/227 , C23C16/455 , C23C16/45544 , C23C16/45589 , H01L21/6719 , H01L21/67207
Abstract: A method is for processing a substrate. The method includes placing the substrate in a process volume and introducing a process gas or vapour into the process volume and/or subsequently removing gas or vapour from the volume. The step of introducing and/or removing the gas is at least partially performed by moving a movable wall to change the process volume in an appropriate sense.
Abstract translation: 一种用于处理衬底的方法。 该方法包括将基底放置在处理体积中并将工艺气体或蒸气引入到处理体积中和/或随后从体积中除去气体或蒸气。 引入和/或去除气体的步骤至少部分地通过移动可移动壁来适当地改变处理体积来执行。
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