公开(公告)号：US20240014018A1

公开(公告)日：2024-01-11

申请号：US18372126

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Tony WILBY ,  Steve BURGESS ,  Adrian THOMAS ,  Rhonda HYNDMAN ,  Scott HAYMORE ,  Clive WIDDICKS ,  Ian MONCRIEFF

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/18 ,  C23C14/06 ,  C23C14/54

CPC classification number: H01J37/3452 ,  C23C14/3485 ,  C23C14/345 ,  C23C14/351 ,  C23C14/185 ,  C23C14/0641 ,  C23C14/542 ,  H01J37/3467 ,  H01J37/347 ,  H01J2237/3323

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US20230212736A1

公开(公告)日：2023-07-06

申请号：US17958390

申请日：2022-10-01

Applicant: SPTS Technologies Limited

Inventor： Scott HAYMORE ,  Tony WILBY ,  Stephen BURGESS

IPC: C23C14/56 ,  C23C14/35 ,  H01J37/34 ,  C23C14/02

CPC classification number: C23C14/566 ,  C23C14/35 ,  H01J37/3405 ,  C23C14/021 ,  H01J37/3447 ,  H01J2237/3322 ,  H01J2237/335 ,  H01J2237/3343

Abstract: A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.