公开(公告)号：US20180019197A1

公开(公告)日：2018-01-18

申请号：US15208313

申请日：2016-07-12

申请人： SRI RANGA SAI BOYAPATI ,  RAHUL N. MANEPALLI ,  DILAN SENEVIRATNE ,  SRINIVAS V. PIETAMBARAM ,  KRISTOF DARMAWIKARTA ,  ROBERT ALAN MAY ,  ISLAM A. SALAMA

发明人： SRI RANGA SAI BOYAPATI ,  RAHUL N. MANEPALLI ,  DILAN SENEVIRATNE ,  SRINIVAS V. PIETAMBARAM ,  KRISTOF DARMAWIKARTA ,  ROBERT ALAN MAY ,  ISLAM A. SALAMA

IPC分类号： H01L23/498 ,  H01L25/065 ,  H01L23/00 ,  H01L21/02 ,  H01L21/48

CPC分类号： H01L23/49838 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/17 ,  H01L25/0655 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/04642 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/15311

摘要： Semiconductor packages with interconnects having passivation thereon is disclosed. The passivation layer may be any suitable dielectric material that may overlie a build-up dielectric layer and metal traces of an interconnect layer in a semiconductor package. Via holes may be formed in the build-up dielectric and the passivation layer may be removed from the bottom of the via hole. By removing the passivation layer at the bottom of the via hole, any residual build-up dielectric may also be removed from the bottom of the via hole. Thus removal of the residual build-up dielectric may not require a desmear process that would otherwise roughen metal and/or dielectric surfaces. The resulting smoother metal and/or dielectric surfaces enabled by the use of the passivation layer may allow greater process latitude and/or flexibility to fabricate relatively smaller dimensional interconnect features and/or relatively improved signaling frequency and integrity.