公开(公告)号：US20140225256A1

公开(公告)日：2014-08-14

申请号：US14256047

申请日：2014-04-18

Applicant: STATS ChipPAC, Ltd.

Inventor： Jen Yu Chen ,  Ting Yu Fu ,  Men Hsien Li ,  Chien Chen Lee

IPC: H01L23/00

CPC classification number: H01L24/10 ,  H01L22/12 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/11 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11903 ,  H01L2224/13 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16058 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract translation: 半导体器件具有在半导体管芯的表面上形成的具有凹部或突起的半导体管芯和导电柱。 导电柱通过在半导体管芯上形成图案化层而形成，在图案化层中形成具有凹部或突起的开口，在开口和凹部或突起中沉积导电材料，并除去图案形成层。 衬底具有沉积在形成在衬底的表面上的导电层上的凸起材料。 凸块材料熔化。 如果导电柱与导电层连接，则将半导体管芯压向衬底，以使熔融的凸块材料流入凹槽或突出部上。 通过X射线或视觉检查来检测导电柱的凹部或突起中是否存在凸块材料。

公开(公告)号：US09478513B2

公开(公告)日：2016-10-25

申请号：US14256047

申请日：2014-04-18

Applicant: STATS ChipPAC, Ltd.

Inventor： Jen Yu Chen ,  Ting Yu Fu ,  Men Hsien Li ,  Chien Chen Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/66

CPC classification number: H01L24/10 ,  H01L22/12 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/11 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11903 ,  H01L2224/13 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16058 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01007 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract translation: 半导体器件具有在半导体管芯的表面上形成的具有凹部或突起的半导体管芯和导电柱。 导电柱通过在半导体管芯上形成图案化层而形成，在图案化层中形成具有凹部或突起的开口，在开口和凹部或突起中沉积导电材料，并除去图案形成层。 衬底具有沉积在形成在衬底的表面上的导电层上的凸起材料。 凸块材料熔化。 如果导电柱与导电层连接，则将半导体管芯压向衬底，以使熔融的凸块材料流入凹槽或突出部上。 通过X射线或视觉检查来检测导电柱的凹部或突起中是否存在凸块材料。