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公开(公告)号:US20170133330A1
公开(公告)日:2017-05-11
申请号:US15415686
申请日:2017-01-25
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: Kian Meng Heng , Hin Hwa Goh , Jose Alvin Caparas , Kang Chen , Seng Guan Chow , Yaojian Lin
CPC classification number: H01L23/562 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/09 , H01L24/19 , H01L24/48 , H01L24/49 , H01L24/96 , H01L2224/0401 , H01L2224/04042 , H01L2224/12105 , H01L2224/48091 , H01L2924/00014 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2224/45099
Abstract: A semiconductor device has a substrate with a stiffening layer disposed over the substrate. The substrate has a circular shape or rectangular shape. A plurality of semiconductor die is disposed over a portion of the substrate while leaving an open area of the substrate devoid of the semiconductor die. The open area of the substrate devoid of the semiconductor die includes a central area or interstitial locations among the semiconductor die. The semiconductor die are disposed around a perimeter of the substrate. An encapsulant is deposited over the semiconductor die and substrate. The substrate is removed and an interconnect structure is formed over the semiconductor die. By leaving the predetermined areas of the substrate devoid of semiconductor die, the warping effect of any mismatch between the CTE of the semiconductor die and the CTE of the encapsulant on the reconstituted wafer after removal of the substrate is reduced.
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公开(公告)号:US10297556B2
公开(公告)日:2019-05-21
申请号:US15415686
申请日:2017-01-25
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: Kian Meng Heng , Hin Hwa Goh , Jose Alvin Caparas , Kang Chen , Seng Guan Chow , Yaojian Lin
Abstract: A semiconductor device has a substrate with a stiffening layer disposed over the substrate. The substrate has a circular shape or rectangular shape. A plurality of semiconductor die is disposed over a portion of the substrate while leaving an open area of the substrate devoid of the semiconductor die. The open area of the substrate devoid of the semiconductor die includes a central area or interstitial locations among the semiconductor die. The semiconductor die are disposed around a perimeter of the substrate. An encapsulant is deposited over the semiconductor die and substrate. The substrate is removed and an interconnect structure is formed over the semiconductor die. By leaving the predetermined areas of the substrate devoid of semiconductor die, the warping effect of any mismatch between the CTE of the semiconductor die and the CTE of the encapsulant on the reconstituted wafer after removal of the substrate is reduced.
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公开(公告)号:US10163747B2
公开(公告)日:2018-12-25
申请号:US15461713
申请日:2017-03-17
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: Kian Meng Heng , Hin Hwa Goh , Jose Alvin Caparas , Kang Chen , Seng Guan Chow , Yaojian Lin
Abstract: A semiconductor device has a substrate with a plurality of active semiconductor die disposed over a first portion of the substrate and a plurality of non-functional semiconductor die disposed over a second portion of the substrate while leaving a predetermined area of the substrate devoid of the active semiconductor die and non-functional semiconductor die. The predetermined area of the substrate devoid of the active semiconductor die and non-functional semiconductor die includes a central area, checkerboard pattern, linear, or diagonal area of the substrate. The substrate can be a circular shape or rectangular shape. An encapsulant is deposited over the active semiconductor die, non-functional semiconductor die, and substrate. An interconnect structure is formed over the semiconductor die. The absence of active semiconductor die and non-functional semiconductor die from the predetermined areas of the substrate reduces bending stress in that area of the substrate.
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公开(公告)号:US20170194228A1
公开(公告)日:2017-07-06
申请号:US15461713
申请日:2017-03-17
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: Kian Meng Heng , Hin Hwa Goh , Jose Alvin Caparas , Kang Chen , Seng Guan Chow , Yaojian Lin
CPC classification number: H01L23/3128 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/562 , H01L24/19 , H01L24/20 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/3511 , H01L2924/37001 , H01L2924/00
Abstract: A semiconductor device has a substrate with a plurality of active semiconductor die disposed over a first portion of the substrate and a plurality of non-functional semiconductor die disposed over a second portion of the substrate while leaving a predetermined area of the substrate devoid of the active semiconductor die and non-functional semiconductor die. The predetermined area of the substrate devoid of the active semiconductor die and non-functional semiconductor die includes a central area, checkerboard pattern, linear, or diagonal area of the substrate. The substrate can be a circular shape or rectangular shape. An encapsulant is deposited over the active semiconductor die, non-functional semiconductor die, and substrate. An interconnect structure is formed over the semiconductor die. The absence of active semiconductor die and non-functional semiconductor die from the predetermined areas of the substrate reduces bending stress in that area of the substrate.
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