公开(公告)号：US20240055374A1

公开(公告)日：2024-02-15

申请号：US17819738

申请日：2022-08-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Peik Eng Ooi ,  Lee Sun Lim

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L24/11 ,  H01L2224/02235 ,  H01L2224/03013 ,  H01L2224/0401 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/02311 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05611 ,  H01L2224/05655 ,  H01L2224/05644 ,  H01L2224/05639 ,  H01L2224/13124 ,  H01L2224/13111 ,  H01L2224/13155 ,  H01L2224/13144 ,  H01L2224/13139 ,  H01L2224/13116 ,  H01L2224/13113 ,  H01L2224/13147 ,  H01L2224/11849

Abstract: A semiconductor device has a semiconductor substrate and first insulating layer formed over the surface of the semiconductor substrate. A dummy via is formed through the first insulating layer. A second insulating layer is formed over the first insulating layer to fill the dummy via. A first conductive layer is formed over the second insulating layer. A bump is formed over the first conductive layer adjacent to the dummy via filled with the second insulating layer. A second conductive layer is formed over a surface of the semiconductor substrate. The dummy via filled with the second insulating layer relieves stress on the second conductive layer. A plurality of dummy vias filled with the second insulating layer can be formed within a designated via formation area. A plurality of dummy vias filled with the second insulating layer can be formed in a pattern.

公开(公告)号：US20240395647A1

公开(公告)日：2024-11-28

申请号：US18323594

申请日：2023-05-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Jian Zuo ,  Lee Sun Lim

IPC: H01L23/31 ,  B23K26/38 ,  H01L21/56 ,  H01L23/00

Abstract: A semiconductor device has a plurality of electrical components and an encapsulant deposited over the electrical components. A first saw street of the encapsulant separates a first electrical component from a second electrical component. A first channel is formed in a first surface of the encapsulant within the first saw street to reduce stress. A second channel is formed in a second surface of the encapsulant opposite the first surface and within the first saw street. A third channel is formed in the first surface of the encapsulant and within a second saw street of the encapsulant normal to the first saw street. An RDL is formed over the electrical components. The RDL has an insulating layer formed over the electrical component, and a conductive layer formed over the insulating layer. The insulating layer terminates prior to the first saw street.