公开(公告)号：US20130316483A1

公开(公告)日：2013-11-28

申请号：US13959297

申请日：2013-08-05

申请人： STEVEN LESTER ,  JEFF RAMER ,  JUN WU ,  LING ZHANG

发明人： STEVEN LESTER ,  JEFF RAMER ,  JUN WU ,  LING ZHANG

IPC分类号： H01L33/06

CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0004 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当来自p型半导体层的孔与其中的n型半导体层的电子结合时，有源层发光。 有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中，而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。