公开(公告)号：US11038595B2

公开(公告)日：2021-06-15

申请号：US16409723

申请日：2019-05-10

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Alexandre Coullomb ,  Romain Coffy ,  Jean-Michel Riviere

IPC: H04B10/40 ,  H01L31/0203 ,  H01L25/04 ,  H04B10/50 ,  H04B10/69

Abstract: An optoelectronic device includes a substrate and a first optoelectronic chip flush with a surface of the substrate. The device includes a cover that covers the substrate and the first optoelectronic chip. The cover comprises a cavity above a first optical transduction region of the first optoelectronic chip. The device also includes a second optoelectronic chip having a second optical transduction region spaced apart from the first optical transduction region and the cavity continues above the second optical transduction region.

公开(公告)号：US09349671B2

公开(公告)日：2016-05-24

申请号：US14511920

申请日：2014-10-10

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Alexandre Coullomb

IPC: H01L23/473 ,  H01L23/48 ,  H01L23/367 ,  H01L23/498 ,  H01L25/10 ,  H01L25/18

CPC classification number: H01L23/473 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/00014

Abstract: An electronic device includes a substrate wafer made of many layers of an insulating material and including an electrical connection network. An integrated circuit chip is mounted to a top side of the substrate wafer. The substrate wafer further includes a metal plate that is integrated into the substrate wafer and thermally coupled to the integrated circuit chip. The metal plate may have a thickness in excess of several layers of the substrate wafer. The metal plate may include a duct through which a thermally conductive fluid flows.

Abstract translation: 电子设备包括由多层绝缘材料制成并包括电连接网络的衬底晶片。 集成电路芯片安装在基板晶片的顶侧。 衬底晶片还包括集成到衬底晶片中并且热耦合到集成电路芯片的金属板。 金属板的厚度可以超过衬底晶片的几层。 金属板可以包括导热流体流过的管道。

公开(公告)号：US11641002B2

公开(公告)日：2023-05-02

申请号：US17199180

申请日：2021-03-11

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Alexandre Coullomb ,  Romain Coffy ,  Jean-Michel Riviere

IPC: G01S7/481 ,  H01L31/16

Abstract: A device includes a substrate and an optoelectronic chip buried in the substrate. The substrate may include an opening above a first optical transduction region of the first optoelectronic chip and above a second optical transduction region of a second optoelectronic chip.

公开(公告)号：US10978607B2

公开(公告)日：2021-04-13

申请号：US16409714

申请日：2019-05-10

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Alexandre Coullomb ,  Romain Coffy ,  Jean-Michel Riviere

IPC: H01L31/16 ,  G01S7/481

Abstract: A device includes a substrate and an optoelectronic chip buried in the substrate. The substrate may include an opening above a first optical transduction region of the first optoelectronic chip and above a second optical transduction region of a second optoelectronic chip.

公开(公告)号：US20150102499A1

公开(公告)日：2015-04-16

申请号：US14511920

申请日：2014-10-10

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Alexandre Coullomb

IPC: H01L23/473 ,  H01L23/50 ,  H01L23/48

CPC classification number: H01L23/473 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/00014

Abstract: An electronic device includes a substrate wafer made of many layers of an insulating material and including an electrical connection network. An integrated circuit chip is mounted to a top side of the substrate wafer. The substrate wafer further includes a metal plate that is integrated into the substrate wafer and thermally coupled to the integrated circuit chip. The metal plate may have a thickness in excess of several layers of the substrate wafer. The metal plate may include a duct through which a thermally conductive fluid flows.

Abstract translation: 电子设备包括由多层绝缘材料制成并包括电连接网络的衬底晶片。 集成电路芯片安装在基板晶片的顶侧。 衬底晶片还包括集成到衬底晶片中并且热耦合到集成电路芯片的金属板。 金属板的厚度可以超过衬底晶片的几层。 金属板可以包括导热流体流过的管道。