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1.发明申请INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY 有权用于检测湿度的电容式集成装置，特别是采用CMOS技术制造公开(公告)号：US20140291778A1
公开(公告)日：2014-10-02
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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公开(公告)号：US20200333197A1
公开(公告)日：2020-10-22
申请号：US16921819
申请日：2020-07-06
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US09540229B2
公开(公告)日：2017-01-10
申请号：US14962945
申请日：2015-12-08
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giuseppe Bruno , Sebastiano Conti , Mario Chiricosta , Michele Vaiana , Calogero Marco Ippolito , Mario Maiore , Daniele Casella
IPC: B81B7/00
CPC classification number: B81B7/007 , B81B7/02 , B81B2201/0264 , B81B2201/0292 , B81B2207/094 , G01L19/0092 , G01N27/223 , H01L23/3121 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A packaged sensor assembly includes: a packaging structure, having at least one opening; a humidity sensor and a pressure sensor, which are housed inside the packaging structure and communicate fluidically with the outside through the opening, and a control circuit, operatively coupled to the humidity sensor and to the pressure sensor; wherein the humidity sensor and the control circuit are integrated in a first chip, and the pressure sensor is integrated in a second chip distinct from the first chip and bonded to the first chip.
Abstract translation: 包装传感器组件包括：具有至少一个开口的包装结构; 湿度传感器和压力传感器，其容纳在包装结构内并通过开口与外部流体连通;以及控制电路，可操作地耦合到湿度传感器和压力传感器; 其中所述湿度传感器和所述控制电路集成在第一芯片中，并且所述压力传感器集成在与所述第一芯片不同的第二芯片中并且被结合到所述第一芯片。
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公开(公告)号：US10739212B2
公开(公告)日：2020-08-11
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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Patent Agency Ranking
5.发明授权Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology 有权用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的公开(公告)号：US09234859B2
公开(公告)日：2016-01-12
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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公开(公告)号：US11035739B2
公开(公告)日：2021-06-15
申请号：US16921819
申请日：2020-07-06
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US20190250047A1
公开(公告)日：2019-08-15
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US10317293B2
公开(公告)日：2019-06-11
申请号：US14958786
申请日：2015-12-03
Applicant: STMicroelectronics S.R.L.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.
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9.发明申请INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD 审中-公开包含温度传感器和感应方法的集成电子设备公开(公告)号：US20160290875A1
公开(公告)日：2016-10-06
申请号：US14958786
申请日：2015-12-03
Applicant: STMicroelectronics S.R.L.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
IPC: G01K7/34
Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.
Abstract translation: 集成在半导体材料芯片中的感测元件具有被配置为反向偏置的结型感测二极管，使得其结电容对于局部温度敏感。 读取级耦合到感测元件，用于检测感测二极管的结电容的变化，并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管具有耦合到偏置节点的阴极端子和耦合到读取级的第一输入端的阳极端子。 偏置节点相对于读取级的第一输入接收电压为正，以保持感测二极管反向偏置。
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