INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD

    公开(公告)号:US20200333197A1

    公开(公告)日:2020-10-22

    申请号:US16921819

    申请日:2020-07-06

    Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

    METHOD AND DEVICE FOR MEASURING ELECTRICAL IMPEDANCE OF BIOLOGICAL TISSUES

    公开(公告)号:US20170354345A1

    公开(公告)日:2017-12-14

    申请号:US15665903

    申请日:2017-08-01

    CPC classification number: A61B5/0535 A61B5/6804 G01N27/028

    Abstract: A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.

    Gas measurement device and measurement method thereof

    公开(公告)号:US09835574B2

    公开(公告)日:2017-12-05

    申请号:US14726823

    申请日:2015-06-01

    CPC classification number: G01N27/121 G01N27/18

    Abstract: A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.

    SEMICONDUCTOR INTEGRATED DEVICE FOR UV-INDEX DETECTION AND RELATED CALIBRATION SYSTEM AND METHOD
    5.
    发明申请
    SEMICONDUCTOR INTEGRATED DEVICE FOR UV-INDEX DETECTION AND RELATED CALIBRATION SYSTEM AND METHOD 有权
    用于UV指示检测的半导体集成器件及相关校准系统及方法

    公开(公告)号:US20150346025A1

    公开(公告)日:2015-12-03

    申请号:US14669593

    申请日:2015-03-26

    Abstract: An integrated device for detection of the UV-index is provided with: a photodetector, which generates a detection quantity as a function of a detected UV radiation; and a processing stage, which is coupled to the photodetector and supplies at output a detected value of the UV-index, on the basis of the detection quantity. The processing stage processes the detection quantity on the basis of an adjustment factor, to supply at output the detected value of the UV-index and is further provided with an adjustment stage, coupled to the processing stage for adjusting the value of the adjustment factor.

    Abstract translation: 提供了一种用于检测UV指数的集成装置:光电检测器,其产生作为检测到的UV辐射的函数的检测量; 以及处理级,其耦合到光电检测器,并且基于检测量在输出时提供UV指数的检测值。 处理阶段基于调整因子处理检测量,在输出时提供UV指标的检测值,并进一步具有调整级,耦合到处理级,用于调整调整因子的值。

    INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY
    6.
    发明申请
    INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY 有权
    用于检测湿度的电容式集成装置,特别是采用CMOS技术制造

    公开(公告)号:US20140291778A1

    公开(公告)日:2014-10-02

    申请号:US14226554

    申请日:2014-03-26

    CPC classification number: G01N27/225 H01L28/40

    Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.

    Abstract translation: 集成电容型湿度传感器,形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极,每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸,导电屏蔽区域在参考电容器上延伸,但不在感测电容器上。

    Thermographic sensor with thermo-couples on a suspended grid and processing circuits in frames thereof

    公开(公告)号:US11725990B2

    公开(公告)日:2023-08-15

    申请号:US17537086

    申请日:2021-11-29

    Abstract: A thermographic sensor is proposed. The thermographic sensor includes a plurality of sensing elements each comprising at least one thermo-couple. The thermographic sensor is integrated on a semiconductor on insulator body that is patterned to define a grid suspended from a substrate; for each sensing element, the grid has a frame with the cold joint of the thermo-couple, a plate with the hot joint of the thermo-couple and one or more arms sustaining the plate from the frame. The frames include one or more conductive layers of thermally conductive material for thermally equalizing the cold joints with the substrate. Moreover, each sensing element may also include a processing circuit for the thermo-couple that is integrated on the corresponding frame. A thermographic device including the thermographic sensor and a corresponding signal processing circuit, and a system including one or more thermographic devices are also proposed.

    Integrated electronic device comprising a temperature sensor and sensing method

    公开(公告)号:US10317293B2

    公开(公告)日:2019-06-11

    申请号:US14958786

    申请日:2015-12-03

    Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.

    INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD
    9.
    发明申请
    INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD 审中-公开
    包含温度传感器和感应方法的集成电子设备

    公开(公告)号:US20160290875A1

    公开(公告)日:2016-10-06

    申请号:US14958786

    申请日:2015-12-03

    CPC classification number: G01K7/343 G01K7/01 G01K7/34

    Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.

    Abstract translation: 集成在半导体材料芯片中的感测元件具有被配置为反向偏置的结型感测二极管,使得其结电容对于局部温度敏感。 读取级耦合到感测元件,用于检测感测二极管的结电容的变化,并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管具有耦合到偏置节点的阴极端子和耦合到读取级的第一输入端的阳极端子。 偏置节点相对于读取级的第一输入接收电压为正,以保持感测二极管反向偏置。

    Integrated electronic device comprising a temperature sensor and sensing method

    公开(公告)号:US10739212B2

    公开(公告)日:2020-08-11

    申请号:US16394804

    申请日:2019-04-25

    Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

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