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    Quenching of a SPAD
    4.
    发明授权
    Quenching of a SPAD 有权

    公开(公告)号：US11336853B2

    公开(公告)日：2022-05-17

    申请号：US17063192

    申请日：2020-10-05

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

    Inventor： Raul Andres Bianchi ,  Matteo Maria Vignetti ,  Bruce Rae

    IPC: H04N5/3745 ,  H04N5/378

    Abstract: The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.

    Deep trench isolation (DTI) bounded single photon avalanche diode (SPAD) on a silicon on insulator (SOI) substrate
    5.
    发明授权
    Deep trench isolation (DTI) bounded single photon avalanche diode (SPAD) on a silicon on insulator (SOI) substrate 有权

    公开(公告)号：US10388816B2

    公开(公告)日：2019-08-20

    申请号：US15712673

    申请日：2017-09-22

    Applicant: STMicroelectronics (Research & Development) Limited

    Inventor： Bruce Rae

    IPC: H01L31/10 ,  H01L31/107 ,  H01L31/02 ,  H01L27/144

    Abstract: A semiconductor on insulator substrate includes a semiconductor support layer, a buried insulating layer over the semiconductor support layer and an epitaxial semiconductor layer over the buried insulating layer. A deep trench isolation penetrates completely through the epitaxial semiconductor layer to the buried insulating layer to electrically insulate a first region of the epitaxial semiconductor layer from a second region of the epitaxial semiconductor layer. A single photon avalanche diode (SPAD) includes an anode formed by the first region of the epitaxial semiconductor layer and a cathode formed by a well located within the first region of the epitaxial semiconductor layer. An ancillary circuit for the SPAD is located in the second region of the epitaxial semiconductor layer and electrically coupled to the SPAD.

    Anode sensing circuit for single photon avalanche diodes
    8.
    发明授权
    Anode sensing circuit for single photon avalanche diodes 有权

    公开(公告)号：US11349042B2

    公开(公告)日：2022-05-31

    申请号：US16718762

    申请日：2019-12-18

    Applicant: STMicroelectronics (Research & Development) Limited

    Inventor： Mohammed Al-Rawhani ,  Neale Dutton ,  John Kevin Moore ,  Bruce Rae ,  Elsa Lacombe

    IPC: H04N5/378 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  H04N5/3745

    Abstract: A pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quenching element, with the SPAD having a capacitance at its anode formed from a deep trench isolation, with the quenching element having a sufficiently high resistance such that the capacitance is not fully charged when the SPAD is struck by an incoming photon. The pixel includes a clamp transistor configured to be controlled by a voltage clamp control signal to clamp voltage at an anode of the SPAD when the SPAD is struck by an incoming photon to be no more than a threshold clamped anode voltage, and readout circuitry coupled to receive the clamped anode voltage from the clamp transistor and to generate a pixel output therefrom. The threshold clamped anode voltage is below a maximum operating voltage rating of transistors forming the readout circuitry.

    EXTENDED HOLD-OFF TIME FOR SPAD QUENCH ASSISTANCE
    9.
    发明申请
    EXTENDED HOLD-OFF TIME FOR SPAD QUENCH ASSISTANCE 有权

    公开(公告)号：US20210181016A1

    公开(公告)日：2021-06-17

    申请号：US16711832

    申请日：2019-12-12

    Applicant: STMicroelectronics (Research & Development) Limited

    Inventor： Mohammed AL-RAWHANI ,  Bruce Rae

    IPC: G01J1/44

    Abstract: A photodetection circuit includes a single photon avalanche diode (SPAD), and an active quenching circuit coupling the SPAD to an intermediate node and having a variable RC constant. The variable RC constant provides a first RC constant during an idle state so that when the SPAD detects a photon, the SPAD avalanches to begin quenching to set a magnitude of a voltage at a terminal of the SPAD to a quench voltage, the quench voltage being greater than a threshold voltage; a second RC constant greater than the first RC constant during a hold off period during which the quenching occurs so as to maintain the voltage at the terminal of the SPAD at a magnitude that is above the threshold voltage during the hold off period; and a third RC constant less than the second RC constant but greater than the first RC constant during a recharge period during which the SPAD is recharged.

    Protected electronic integrated circuit chip
    10.
    发明授权
    Protected electronic integrated circuit chip 有权

    公开(公告)号：US10950559B2

    公开(公告)日：2021-03-16

    申请号：US16436747

    申请日：2019-06-10

    Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics (Research & Development) Limited

    Inventor： Mathieu Lisart ,  Bruce Rae

    IPC: H01L23/58 ,  H01L23/00

    Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

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