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    METHOD FOR MANUFACTURING STRUCTURE
    3.
    发明申请
    METHOD FOR MANUFACTURING STRUCTURE 有权

    公开(公告)号：US20220270887A1

    公开(公告)日：2022-08-25

    申请号：US17629157

    申请日：2020-07-06

    申请人： SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Fumimasa HORIKIRI ,  Noboru FUKUHARA

    IPC分类号： H01L21/3063 ,  H01L21/306

    摘要： There is provided a method for manufacturing a structure, including:
    applying a first etching to a surface of a member, at least the surface being composed of Group III nitride; and applying a second etching to the surface to which the first etching has been applied, wherein in applying the first etching, a flat portion and a protruding portion are formed, the flat portion being newly appeared on the surface by etching, and the protruding portion being raised with respect to the flat portion, which is caused by being less likely to be etched than the flat portion, and in applying the second etching, the protruding portion is lowered by etching the protruding portion.

    STRUCTURE MANUFACTURING METHOD AND INTERMEDIATE STRUCTURE
    4.
    发明申请
    STRUCTURE MANUFACTURING METHOD AND INTERMEDIATE STRUCTURE 有权

    公开(公告)号：US20220148883A1

    公开(公告)日：2022-05-12

    申请号：US17605834

    申请日：2020-03-13

    申请人： SCIOCS COMPNY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Fumimasa HORIKIRI ,  Noboru RUKUHARA

    IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L29/20

    摘要： A structure manufacturing method including: preparing a treatment object that includes an etching target having a surface to be etched comprising a conductive group III nitride and a region to be etched, a conductive member in contact with at least a portion of a surface of a conductive region of the etching target that is electrically connected to the region to be etched, and a mask formed on the surface to be etched and comprising a non-conductive material; and etching the group III nitride by immersing the treatment object in an alkaline or acidic etching solution containing peroxodisulfate ions as an oxidizing agent that accepts electrons, and irradiating the surface to be etched with light through the etching solution, wherein an edge that defines the region to be etched is constituted by an edge of the mask without including an edge of the conductive member.

    METHOD AND DEVICE FOR MANUFACTURING STRUCTURE
    9.
    发明申请
    METHOD AND DEVICE FOR MANUFACTURING STRUCTURE 有权

    公开(公告)号：US20220325431A1

    公开(公告)日：2022-10-13

    申请号：US17640003

    申请日：2020-07-06

    申请人： SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Fumimasa HORIKIRI ,  Noboru FUKUHARA

    IPC分类号： C25F3/12 ,  C25F7/00

    摘要： A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.

    METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR INSPECTING FILM QUALITY, AND METHOD FOR INSPECTING SEMICONDUCTOR GROWING DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE, NITRIDE SEMICONDUCTOR LAMINATE, METHOD FOR INSPECTING FILM QUALITY, AND METHOD FOR INSPECTING SEMICONDUCTOR GROWING DEVICE 有权

    公开(公告)号：US20210215621A1

    公开(公告)日：2021-07-15

    申请号：US17055539

    申请日：2019-04-08

    申请人： SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Fumimasa HORIKIRI

    IPC分类号： G01N21/95 ,  H01L29/20 ,  G01N21/59 ,  G01N21/3563 ,  G01N21/359 ,  H01L21/66 ,  H01L21/02

    摘要： There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 5×106 pieces/cm2 or less, a concentration of oxygen therein is less than 1×1017 at·cm−3, and a concentration of impurities therein other than n-type impurity is less than 1×1017 at·cm−3; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cm−1 or more and 1,700 cm−1 or less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected. light at the predetermined wavenumber determined according to a film thickness of the thin film, a carder concentration of the substrate, and a carrier concentration of the thin film.