公开(公告)号：US08643005B2

公开(公告)日：2014-02-04

申请号：US12949321

申请日：2010-11-18

申请人： Sung-Hui Huang ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： Sung-Hui Huang ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： H01L33/18 ,  H01L21/4757

CPC分类号： H01L27/3248 ,  H01L27/1225

摘要： An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.

摘要翻译： 有机发光显示装置包括基板，透明电极层，源极/漏极层，IGZO半导体层，第一绝缘层，栅极层，第二绝缘层和有机发光二极管。 有机发光显示装置可以具有简化的制造工艺。 另外，本发明还提供一种制造有机发光显示装置的方法。

公开(公告)号：US08358167B2

公开(公告)日：2013-01-22

申请号：US12974206

申请日：2010-12-21

申请人： Wei-Chou Lan ,  Sung-Hui Huang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： Wei-Chou Lan ,  Sung-Hui Huang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： H01L27/144 ,  H01L31/062 ,  H01L31/09 ,  H01L31/10 ,  H03K17/30 ,  H03K17/687

CPC分类号： H01L27/14609 ,  H01L31/02019 ,  H04N5/374 ,  H04N5/3741

摘要： A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.

摘要翻译： 在光传感器中使用的感光单元包括感光晶体管，存储电容器和开关晶体管。 感光晶体管相应地接收用于感应光电流的光信号，并且其源极和栅极分别耦合到第一信号源和第二信号源。 存储电容器存储由光信号引起的电荷，其一个端子耦合到感光晶体管的漏极，并且其另一个端子耦合到低电压。 开关晶体管由第二信号源控制，用于将存储电容器的读出信号输出到信号读出线。 光电晶体管的阈值电压高于开关晶体管的阈值电压。

公开(公告)号：US09182641B2

公开(公告)日：2015-11-10

申请号：US13166826

申请日：2011-06-23

申请人： Wei-Chou Lan ,  Sung-Hui Huang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： Wei-Chou Lan ,  Sung-Hui Huang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  G02F1/1362 ,  G09G3/20 ,  H01L27/12

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G09G3/20 ,  G09G2300/0421 ,  H01L27/124

摘要： The signal line structure is disposed between a gate driver and a display area of a display. The signal line structure includes a substrate, first metal layers, a first insulation layer, second metal layers, a second insulation layer and third metal layers. The first metal layers are arranged in parallel and toward a first direction in the substrate. The first insulation layer is disposed in the substrate and covers the first metal layers. The second metal layers are disposed on the positions of the first insulation layer corresponding to the first metal layers. The second insulation layer is disposed on the second metal layers and the first insulation layer. The third metal layers are disposed on the positions corresponding to the second metal layers in the second insulation layer. The distance between two adjacent second metal layers is less than that between two adjacent first metal layers.

摘要翻译： 信号线结构设置在显示器的栅极驱动器和显示区域之间。 信号线结构包括基板，第一金属层，第一绝缘层，第二金属层，第二绝缘层和第三金属层。 第一金属层在基板中平行且朝向第一方向排列。 第一绝缘层设置在基板中并覆盖第一金属层。 第二金属层设置在对应于第一金属层的第一绝缘层的位置上。 第二绝缘层设置在第二金属层和第一绝缘层上。 第三金属层设置在与第二绝缘层中的第二金属层对应的位置上。 两个相邻的第二金属层之间的距离小于两个相邻的第一金属层之间的距离。

公开(公告)号：US20110304593A1

公开(公告)日：2011-12-15

申请号：US12830031

申请日：2010-07-02

申请人： Sung-Hui HUANG ,  Ted-Hong Shinn ,  Wei-Chou Lan ,  Chin-Wen Lin

发明人： Sung-Hui HUANG ,  Ted-Hong Shinn ,  Wei-Chou Lan ,  Chin-Wen Lin

IPC分类号： G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3225 ,  G09G2300/0814 ,  G09G2310/0262 ,  G09G2320/045

摘要： A pixel driving circuit, a pixel driving method and a light emitting display device are provided in the present invention. The pixel driving circuit includes first through fifth transistors and a capacitor and is for driving a light emitting diode. The third transistor forms a diode connection to make information of the threshold voltages of both the third transistor and the light emitting diode be stored in the capacitor in a data writing period. In a light emitting period, the second transistor compensates drift variation of the threshold voltages of the third transistor and the light emitting diode according to the information stored in the capacitor to provide a stable driving current for driving the light emitting diode.

摘要翻译： 在本发明中提供像素驱动电路，像素驱动方法和发光显示装置。 像素驱动电路包括第一至第五晶体管和电容器，用于驱动发光二极管。 第三晶体管形成二极管连接，以在数据写入周期内将第三晶体管和发光二极管的阈值电压的信息存储在电容器中。 在发光期间，第二晶体管根据存储在电容器中的信息补偿第三晶体管和发光二极管的阈值电压的漂移变化，以提供用于驱动发光二极管的稳定的驱动电流。

公开(公告)号：US20120068172A1

公开(公告)日：2012-03-22

申请号：US12949321

申请日：2010-11-18

申请人： SUNG-HUI HUANG ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： SUNG-HUI HUANG ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： H01L33/18 ,  H01L21/4757

CPC分类号： H01L27/3248 ,  H01L27/1225

摘要： An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.

摘要翻译： 有机发光显示装置包括基板，透明电极层，源极/漏极层，IGZO半导体层，第一绝缘层，栅极层，第二绝缘层和有机发光二极管。 有机发光显示装置可以具有简化的制造工艺。 另外，本发明还提供一种制造有机发光显示装置的方法。

公开(公告)号：US20110278563A1

公开(公告)日：2011-11-17

申请号：US12838107

申请日：2010-07-16

申请人： SUNG-HUI HUANG ,  Wei-Chou Lan ,  Ted-Hong Shinn

发明人： SUNG-HUI HUANG ,  Wei-Chou Lan ,  Ted-Hong Shinn

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/34 ,  H01L29/786

CPC分类号： H01L27/1225

摘要： A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.

摘要翻译： 薄膜晶体管阵列基板包括基板，栅极层，栅极绝缘层，源极/漏极层，图案化保护层，氧化物半导体层，树脂层和像素电极。 栅极层设置在基板上。 栅极绝缘层设置在栅极层和基板上。 源极/漏极层设置在栅极绝缘层上。 图案化的保护层设置在源极/漏极层上并暴露源极/漏极层的一部分。 氧化物半导体层设置在图案化的保护层上并电连接到源极/漏极层。 树脂层设置在氧化物半导体层上并覆盖氧化物半导体层。 像素电极设置在树脂层上并连接到源极/漏极层。 本发明还提供了制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以防止漏电流。

公开(公告)号：US08723843B2

公开(公告)日：2014-05-13

申请号：US12830031

申请日：2010-07-02

申请人： Sung-Hui Huang ,  Ted-Hong Shinn ,  Wei-Chou Lan ,  Chin-Wen Lin

发明人： Sung-Hui Huang ,  Ted-Hong Shinn ,  Wei-Chou Lan ,  Chin-Wen Lin

IPC分类号： G06F3/038 ,  G09G5/00

CPC分类号： G09G3/3225 ,  G09G2300/0814 ,  G09G2310/0262 ,  G09G2320/045

摘要： A pixel driving circuit, a pixel driving method and a light emitting display device are provided in the present invention. The pixel driving circuit includes first through fifth transistors and a capacitor and is for driving a light emitting diode. The third transistor forms a diode connection to make information of the threshold voltages of both the third transistor and the light emitting diode be stored in the capacitor in a data writing period. In a light emitting period, the second transistor compensates drift variation of the threshold voltages of the third transistor and the light emitting diode according to the information stored in the capacitor to provide a stable driving current for driving the light emitting diode.

摘要翻译： 在本发明中提供像素驱动电路，像素驱动方法和发光显示装置。 像素驱动电路包括第一至第五晶体管和电容器，用于驱动发光二极管。 第三晶体管形成二极管连接，以在数据写入周期内将第三晶体管和发光二极管的阈值电压的信息存储在电容器中。 在发光期间，第二晶体管根据存储在电容器中的信息补偿第三晶体管和发光二极管的阈值电压的漂移变化，以提供用于驱动发光二极管的稳定的驱动电流。

公开(公告)号：US08314020B2

公开(公告)日：2012-11-20

申请号：US13024335

申请日：2011-02-10

申请人： Sung-Hui Huang ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： Sung-Hui Huang ,  Wei-Chou Lan ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  C25F5/00 ,  H01L21/32134 ,  H01L27/1292 ,  H01L29/45 ,  H01L29/66969

摘要： Disclosed herein is a method for patterning a metal layer, which includes the following steps. A substrate having a metal layer thereon is provided. A patterned conductive polymeric layer is formed on the metal layer, wherein a portion of the metal layer is exposed by the patterned conductive polymeric layer. The substrate having the patterned conductive polymer layer is disposed in an electrolytic cell, so that the exposed portion of the metal layer is immersed in the electrolytic solution of the electrolytic cell. The anode of the electrolytic cell is electrically coupled to the patterned conductive polymeric layer, while the cathode of the electrolytic cell is immersed in the electrolytic solution. Sequentially, an electrical potential is applied across the anode and the cathode to perform an electrolysis reaction so that the exposed portion of the metal layer is dissolved in the electrolytic solution.

摘要翻译： 本文公开了一种图案化金属层的方法，其包括以下步骤。 提供其上具有金属层的基板。 图案化的导电聚合物层形成在金属层上，其中金属层的一部分被图案化的导电聚合物层暴露。 将具有图案化导电聚合物层的基板设置在电解槽中，使金属层的露出部分浸渍在电解槽的电解液中。 电解池的阳极与图案化的导电聚合物层电耦合，同时将电解槽的阴极浸入电解液中。 接着，在阳极和阴极两端施加电位，进行电解反应，使金属层的暴露部分溶解在电解液中。

公开(公告)号：US08138548B2

公开(公告)日：2012-03-20

申请号：US12838107

申请日：2010-07-16

申请人： Sung-Hui Huang ,  Wei-Chou Lan ,  Ted-Hong Shinn

发明人： Sung-Hui Huang ,  Wei-Chou Lan ,  Ted-Hong Shinn

IPC分类号： H01L29/786

CPC分类号： H01L27/1225

摘要： A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.

摘要翻译： 薄膜晶体管阵列基板包括基板，栅极层，栅极绝缘层，源极/漏极层，图案化保护层，氧化物半导体层，树脂层和像素电极。 栅极层设置在基板上。 栅极绝缘层设置在栅极层和基板上。 源极/漏极层设置在栅极绝缘层上。 图案化的保护层设置在源极/漏极层上并暴露源极/漏极层的一部分。 氧化物半导体层设置在图案化的保护层上并电连接到源极/漏极层。 树脂层设置在氧化物半导体层上并覆盖氧化物半导体层。 像素电极设置在树脂层上并连接到源极/漏极层。 本发明还提供了制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以防止漏电流。

公开(公告)号：US20130175520A1

公开(公告)日：2013-07-11

申请号：US13611279

申请日：2012-09-12

申请人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

发明人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/4908

摘要： A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

摘要翻译： 提供了适合于设置在基板上的薄膜晶体管。 薄膜晶体管包括栅电极，有机栅介质层，金属氧化物半导体层，源电极和漏电极。 栅电极设置在基板上。 有机栅极介电层设置在基板上以覆盖栅电极。 源电极，漏电极和金属氧化物半导体层设置在有机栅极电介质层的上方，金属氧化物半导体层与源电极和漏电极接触。 由于薄膜晶体管的沟道层是在较低温度下形成的金属氧化物半导体层，因此薄膜晶体管可以广泛地应用于诸如柔性显示器件的各种显示应用中。