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    IN-CELL BYPASS DIODE
    1.
    发明申请
    IN-CELL BYPASS DIODE 有权

    公开(公告)号：US20230038148A1

    公开(公告)日：2023-02-09

    申请号：US17971369

    申请日：2022-10-21

    申请人： SunPower Corporation

    发明人： Seung Bum Rim ,  Gabriel Harley

    IPC分类号： H01L31/0443 ,  H01L31/18 ,  H01L27/142 ,  H01L31/02 ,  H01L31/0368

    摘要： A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

    Metallization of solar cells with differentiated p-type and n-type region architectures
    2.
    发明授权
    Metallization of solar cells with differentiated p-type and n-type region architectures 有权

    公开(公告)号：US11355657B2

    公开(公告)日：2022-06-07

    申请号：US14672067

    申请日：2015-03-27

    申请人： SUNPOWER CORPORATION

    发明人： Staffan Westerberg ,  Gabriel Harley

    IPC分类号： H01L31/0236 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216

    摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

    LEAVE-IN ETCH MASK FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
    3.
    发明申请
    LEAVE-IN ETCH MASK FOR FOIL-BASED METALLIZATION OF SOLAR CELLS 有权

    公开(公告)号：US20210057593A1

    公开(公告)日：2021-02-25

    申请号：US17082995

    申请日：2020-10-28

    申请人： SunPower Corporation

    发明人： Richard Hamilton Sewell ,  David Fredric Joel Kavulak ,  Taeseok Kim ,  Gabriel Harley

    IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/18

    摘要： Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.

    SOLAR CELL HAVING A PLURALITY OF SUB-CELLS COUPLED BY A METALLIZATION STRUCTURE
    4.
    发明申请
    SOLAR CELL HAVING A PLURALITY OF SUB-CELLS COUPLED BY A METALLIZATION STRUCTURE 审中-公开

    公开(公告)号：US20200279967A1

    公开(公告)日：2020-09-03

    申请号：US16832819

    申请日：2020-03-27

    申请人： SunPower Corporation

    发明人： Gabriel Harley ,  Michael Morse ,  Peter John Cousins

    IPC分类号： H01L31/05 ,  H01L31/0475 ,  H01L31/028 ,  H01L31/048 ,  H01L31/068

    摘要： Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.

    Solar cell having a plurality of sub-cells coupled by a metallization structure having a metal bridge
    6.
    发明授权
    Solar cell having a plurality of sub-cells coupled by a metallization structure having a metal bridge 有权

    公开(公告)号：US10573763B2

    公开(公告)日：2020-02-25

    申请号：US14983345

    申请日：2015-12-29

    申请人： SUNPOWER CORPORATION

    发明人： Gabriel Harley

    IPC分类号： H01L31/02 ,  H01L31/18

    摘要： Solar cells having a plurality of sub-cells coupled by metallization structures having a metal bridge, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, the metal bridge can provide structural support and provide for an electrical connection between a first contact pad and a first busbar. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between and where the metal bridge can be perpendicular to the groove. The solar cell can include a first contact pad adjacent to a second contact pad.

    Thick damage buffer for foil-based metallization of solar cells
    7.
    发明授权
    Thick damage buffer for foil-based metallization of solar cells 有权

    公开(公告)号：US10199521B2

    公开(公告)日：2019-02-05

    申请号：US15279950

    申请日：2016-09-29

    申请人： SUNPOWER CORPORATION

    发明人： David Fredric Joel Kavulak ,  Gabriel Harley ,  Thomas P. Pass

    IPC分类号： H01L21/00 ,  H01L31/0368 ,  H01L31/0475 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/18

    摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.