公开(公告)号：US20220262965A1

公开(公告)日：2022-08-18

申请号：US17738978

申请日：2022-05-06

申请人： SunPower Corporation

发明人： Staffan Westerberg ,  Gabriel Harley

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

公开(公告)号：US10804415B2

公开(公告)日：2020-10-13

申请号：US15831362

申请日：2017-12-04

申请人： SUNPOWER CORPORATION

发明人： Staffan Westerberg ,  Gabriel Harley

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/18

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

公开(公告)号：US20150179838A1

公开(公告)日：2015-06-25

申请号：US14136751

申请日：2013-12-20

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Balu Venkatasubramani

IPC分类号： H01L31/0224 ,  H01L31/20 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

摘要翻译： 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池包括具有受光面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层横向地设置在第一和第二多晶硅发射极区之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。

公开(公告)号：US11355657B2

公开(公告)日：2022-06-07

申请号：US14672067

申请日：2015-03-27

申请人： SUNPOWER CORPORATION

发明人： Staffan Westerberg ,  Gabriel Harley

IPC分类号： H01L31/0236 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

公开(公告)号：US20200075784A1

公开(公告)日：2020-03-05

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/0745 ,  H01L31/068 ,  H01L31/20

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US09196758B2

公开(公告)日：2015-11-24

申请号：US14136751

申请日：2013-12-20

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/20

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

摘要翻译： 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池包括具有受光面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层横向地设置在第一和第二多晶硅发射极区之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。

公开(公告)号：US20140273326A1

公开(公告)日：2014-09-18

申请号：US13837802

申请日：2013-03-15

申请人： SunPower Corporation

发明人： Staffan Westerberg ,  Florito Dennis Tingchuy Vicente ,  Michael Cudzinovic

IPC分类号： H01L21/02 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Methods for protecting a texturized region and a lightly doped diffusion region of a solar cell to improve solar cell lifetime and efficiency are disclosed. In an embodiment, an example method includes providing a solar cell having a front side which faces the sun during normal operation and a back side opposite the front side, a silicon substrate and where the silicon substrate includes a texturized region and a lightly doped diffusion region. The method includes placing the solar cell on a receiving medium with the front side of the solar cell placed on an upper surface of the receiving medium, where the upper surface of the receiving medium prevents damage to the to the lightly doped diffusion region and damage to the texturized region on the front side of the solar cell during a contact printing process or transferring. In an embodiment, the lightly doped diffusion region has a doping concentration below 1×1019 cm−3 and the receiving medium includes a material having a moh's hardness in the range of 5-10.

摘要翻译： 公开了用于保护太阳能电池的纹理化区域和轻掺杂扩散区域以改善太阳能电池寿命和效率的方法。 在一个实施例中，一种示例性方法包括提供在正常操作期间具有面向太阳的正面和与正面相反的背面的太阳能电池，硅衬底以及硅衬底包括纹理化区域和轻掺杂扩散区域 。 该方法包括将太阳能电池放置在接收介质上，其中太阳能电池的正面放置在接收介质的上表面上，其中接收介质的上表面防止对轻掺杂扩散区的损害，并损坏 在接触印刷处理或转印期间在太阳能电池的正面上的纹理化区域。 在一个实施例中，轻掺杂扩散区的掺杂浓度低于1×10 19 cm -3，并且接收介质包括莫氏硬度在5-10的范围内的材料。

公开(公告)号：US20190019904A1

公开(公告)日：2019-01-17

申请号：US16133477

申请日：2018-09-17

申请人： SunPower Corporation

发明人： Staffan Westerberg ,  Alejandro Levander ,  Peter John Cousins

IPC分类号： H01L31/0236 ,  H01L31/068 ,  H01L31/18 ,  H01L31/047 ,  H01L31/0224 ,  H01L31/0216

摘要： Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions. An approximately Gaussian distribution of P-type dopants is included in the N-type single crystalline silicon substrate below the segmented P-type emitter regions. A maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions. Substantially vertical P/N junctions are included in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.

公开(公告)号：US09997652B2

公开(公告)日：2018-06-12

申请号：US14866239

申请日：2015-09-25

申请人： SUNPOWER CORPORATION

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

公开(公告)号：US09960292B2

公开(公告)日：2018-05-01

申请号：US15065320

申请日：2016-03-09

申请人： SunPower Corporation

发明人： Staffan Westerberg ,  Peter John Cousins

IPC分类号： H01L31/044 ,  H01L31/0224 ,  H01L31/05

CPC分类号： H01L31/022441 ,  H01L31/022433 ,  H01L31/0516 ,  Y02E10/50

摘要： A solar cell includes negative metal contact fingers and positive metal contact fingers. The negative metal contact fingers are interdigitated with the positive metal contact fingers. The metal contact fingers, both positive and negative, have a radial design where they radially extend to surround at least 25% of a perimeter of a corresponding contact pad. The metal contact fingers have bend points, which collectively form a radial pattern with a center point within the contact pad. Exactly two metal contact pads merge into a single leading metal contact pad that is wider than either of the exactly two metal contact pads.