公开(公告)号：US20240290684A1

公开(公告)日：2024-08-29

申请号：US18569492

申请日：2022-03-17

Applicant: SUPERUFO291 TEC

Inventor： Akira FUKUI ,  Toshie FUKUI

IPC: H01L23/373 ,  B32B3/26 ,  B32B15/04 ,  B32B15/20

CPC classification number: H01L23/3735 ,  B32B3/266 ,  B32B15/043 ,  B32B15/20 ,  B32B2307/302 ,  B32B2307/7376 ,  B32B2457/14

Abstract: A bonding member includes a layered body formed by layering a plurality of foils made of a material selected from Au, Ag, Cu, Al, Ni, Sn, Zn, Mg, Pb, and an alloy of two or more of these metals, which are metals having high heat conductivity, the layered body having a void of 5 vol % or more and 30 vol % or less inside, in which thermal conductivity after a power cycle test in which heating to 200° C. and cooling to 25° C. are repeated 300 times is 30 W/m·K or more.

公开(公告)号：US20230395550A1

公开(公告)日：2023-12-07

申请号：US18014272

申请日：2021-06-28

Applicant: SUPERUFO291 TEC

Inventor： Akira FUKUI ,  Toshie FUKUI

IPC: H01L23/00 ,  B23K35/30 ,  B23K35/02

CPC classification number: H01L24/29 ,  B23K35/3006 ,  B23K35/0233 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05644 ,  H01L2224/05155 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29144 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/29147 ,  H01L2224/29124 ,  H01L2224/2908 ,  H01L24/32 ,  H01L24/05 ,  H01L2924/0132 ,  B23K2101/40

Abstract: A bonding member 10 used for bonding a semiconductor device 20 and a substrate 30, the bonding member including: a thermal stress relieving layer 11 made of any of Ag, Cu, Au, and Al; a first Ag brazing material layer 12 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the semiconductor device is bonded; a second Ag brazing material layer 13 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the substrate is bonded; a first barrier layer 14 made of Ni and/or Ni alloy and provided between the thermal stress relieving layer and the first Ag brazing material layer; and a second barrier layer 15 made of Ni and/or Ni alloy and provided between the stress relieving layer and the second Ag brazing material layer, in which a thermal conductivity of the bonding member after a power cycle test is 200 W/m·K or more.