摘要:
An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.
摘要:
An impregnated cathode having a complex porous body of one-body construction which is mounted in a metal sleeve and in which a partition layer made of a porous material having a porosity less than 17% is arranged in close contact with an impregnated layer made of a porous material containing an electron emissive material. The aforementioned porous partition layer takes the place of the conventional partition plate of refractory metal. The impregnated cathode according to the present invention can not only have its size reduced without any difficulty but also enjoy a high emission current density with a remarkably small dispersion.
摘要:
An electron tube cathode in such a structure comprising a Ni-W-Zr alloy (W content: 20-28 wt. %) having a grain size of 4-10 .mu.m as a base metal, a 1,000-2,000 A-thick Pt film provided on the surface of the base metal, and an electron emitting material layer consisting of alkaline earth metal oxide provided on the Pt film has less emission lowering and less peeling of the electron emitting material layer, even if placed in a long time service. The electron tube cathode can be produced according to a method comprising (i) a step of annealing a base metal of Ni-W-Zr alloy (W content: 20-28 wt. %) at 1,000.degree.-1,200.degree. C., (ii) a step of providing a 1,000-2,000 A thick Pt film on the surface of the base metal, and (iii) a step of providing an electron emitting material layer consisting of alkaline earth metal oxide on the Pt film.
摘要:
An impregnated cathode comprises a porous refractory substrate of refractory material such as tungsten containing at least one of scandium oxide particles and oxide particles containing scandium such as (Al, Sc).sub.2 O.sub.3, and an electron emissive material impregnated into pores of the substrate, and has an operating temperature lower by about 300.degree. C. than that of the conventional impregnated cathode containing no scandium oxide particles, or scandium.
摘要翻译:浸渍阴极包括耐火材料的多孔耐火基材,例如含有氧化钪颗粒和含有钪的氧化物颗粒如(Al,Sc)2 O 3中的至少一种的钨和浸渍在基材的孔中的电子发射材料,并且具有 操作温度比不含氧化钪颗粒或钪的常规浸渍阴极低约300℃。
摘要:
Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要:
Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要:
The present invention relates to an impregnated cathode produced by attaching at least two layered thin films, the thin films comprising an under layer consisting of a high melting point metal thin film composed of, for example, Os, Ru, Rh, Pd, Ir, Pt, Re, Mo, W, Ta, etc., and an over layer consisting of a high melting point metal layer which contains Sc.sub.2 O.sub.3 and which is placed over the layer, on the surface of the impregnated cathode pellet generated by impregnating a refractory porous base body with electron emissive materials. The invention relates also to an electron tube having this cathode. This cathode maintains a low work functional mono-layer stably for a long period of time on its surface.
摘要翻译:本发明涉及通过附着至少两层薄膜而制造的浸渍阴极,该薄膜包括由例如由Os,Ru,Rh,Pd,Ir组成的高熔点金属薄膜构成的底层, Pt,Re,Mo,W,Ta等,以及由含有Sc 2 O 3的高熔点金属层构成的覆层,该层由放置在该层上的浸渍的阴极粒子的表面上, 基体与电子发射材料。 本发明还涉及具有该阴极的电子管。 该阴极在其表面上长时间稳定地保持低功函数单层。
摘要:
Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要:
Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要:
An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1