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公开(公告)号：US20130286105A1
公开(公告)日：2013-10-31
申请号：US13978768
申请日：2011-01-31
CPC分类号： B41J2/05 , B41J2/14129 , B41J2/1603 , B41J2/1626 , B41J2/1628 , B41J2/1645 , B41J2002/14467
摘要： In one embodiment, a fluid ejection device includes a substrate with a fluid slot and a membrane adhered to the substrate that spans the fluid slot. A resistor is disposed on top of the membrane over the fluid slot, and a fluid feed hole next to the resistor extends through the membrane to the slot. A shelf extends from the edge of the resistor to the edge of the feed hole, and a passivation layer covers the resistor and part the shelf. An etch-resistant layer is formed partly on the shelf and in between the fluid feed hole and the resistor.
摘要翻译： 在一个实施例中，流体喷射装置包括具有流体狭槽的基底和附着到跨越流体狭槽的基底的膜。 电阻器设置在流体槽上的膜的顶部上，并且电阻旁边的流体供给孔延伸穿过膜到槽。 一个搁板从电阻器的边缘延伸到馈电孔的边缘，钝化层覆盖电阻器和部件。 防腐蚀层部分地形成在搁板上并且在流体供给孔和电阻器之间。
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公开(公告)号：US09033470B2
公开(公告)日：2015-05-19
申请号：US13978768
申请日：2011-01-31
CPC分类号： B41J2/05 , B41J2/14129 , B41J2/1603 , B41J2/1626 , B41J2/1628 , B41J2/1645 , B41J2002/14467
摘要： In one embodiment, a fluid ejection device includes a substrate with a fluid slot and a membrane adhered to the substrate that spans the fluid slot. A resistor is disposed on top of the membrane over the fluid slot, and a fluid feed hole next to the resistor extends through the membrane to the slot. A shelf extends from the edge of the resistor to the edge of the feed hole, and a passivation layer covers the resistor and part the shelf. An etch-resistant layer is formed partly on the shelf and in between the fluid feed hole and the resistor.
摘要翻译： 在一个实施例中，流体喷射装置包括具有流体狭槽的基底和附着到跨越流体狭槽的基底的膜。 电阻器设置在流体槽上的膜的顶部上，并且电阻旁边的流体供给孔延伸穿过膜到槽。 一个搁板从电阻器的边缘延伸到馈电孔的边缘，钝化层覆盖电阻器和部件。 防腐蚀层部分地形成在搁板上并且在流体供给孔和电阻器之间。
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公开(公告)号：US20130162717A1
公开(公告)日：2013-06-27
申请号：US13821204
申请日：2010-09-15
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1634
摘要： A method for fabricating a fluid nozzle array includes forming a circuitry layer onto a substrate, the substrate comprising a stopping layer disposed between a membrane layer and a handle layer, forming a fluid feedhole extending from a surface of the membrane layer to the stopping layer, and forming a fluid supply trench extending from a surface of the handle layer to the stopping layer. A fluid nozzle array includes a substrate including a membrane layer, a stopping layer adjacent to the membrane layer, a handle layer adjacent to the stopping layer, and a set of fluid chambers disposed on a surface of the membrane layer above and along a width of a fluid supply trench extending from a surface of the handle layer to the stopping layer.
摘要翻译： 用于制造流体喷嘴阵列的方法包括在基底上形成电路层，所述基底包括设置在膜层和手柄层之间的阻挡层，形成从膜层的表面延伸到止动层的流体供给孔， 以及形成从手柄层的表面延伸到止挡层的流体供给沟槽。 一种流体喷嘴阵列包括：基材，其包括膜层，与膜层相邻的停止层，与停止层相邻的手柄层，以及一组流体室，其设置在膜层的表面上方并沿其宽度 从手柄层的表面延伸到止挡层的流体供应沟槽。
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公开(公告)号：US08690295B2
公开(公告)日：2014-04-08
申请号：US13821204
申请日：2010-09-15
IPC分类号： B41J2/14
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1634
摘要： A method for fabricating a fluid nozzle array includes forming a circuitry layer onto a substrate, the substrate comprising a stopping layer disposed between a membrane layer and a handle layer, forming a fluid feedhole extending from a surface of the membrane layer to the stopping layer, and forming a fluid supply trench extending from a surface of the handle layer to the stopping layer. A fluid nozzle array includes a substrate including a membrane layer, a stopping layer adjacent to the membrane layer, a handle layer adjacent to the stopping layer, and a set of fluid chambers disposed on a surface of the membrane layer above and along a width of a fluid supply trench extending from a surface of the handle layer to the stopping layer.
摘要翻译： 用于制造流体喷嘴阵列的方法包括在基底上形成电路层，所述基底包括设置在膜层和手柄层之间的阻挡层，形成从膜层的表面延伸到止动层的流体供给孔， 以及形成从手柄层的表面延伸到止挡层的流体供给沟槽。 一种流体喷嘴阵列包括：基材，其包括膜层，与膜层相邻的停止层，与停止层相邻的手柄层，以及一组流体室，其设置在膜层的表面上方并沿其宽度 从手柄层的表面延伸到止挡层的流体供应沟槽。
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5.发明申请INKJET-PRINTING DEVICE PRINTHEAD DIE HAVING EDGE PROTECTION LAYER FOR HEATING RESISTOR 审中-公开喷墨打印机具有加热电阻器边缘保护层的打印机公开(公告)号：US20100231655A1
公开(公告)日：2010-09-16
申请号：US12739066
申请日：2007-11-24
IPC分类号： B41J2/05
CPC分类号： B41J2/14129 , B41J2/1601 , B41J2/1631
摘要： A printhead die (200) for an inkjet-printing device includes a substrate (302), a heating resistor, and an edge protection layer (209) The heating resistor is formed on the substrate, and has one or more edges The heating resistor is operative to cause an ink droplet to be ejected from the inkjet-printing device upon sufficient current flowing through the heating resistor resulting in a bubble nucleating within ink at the heating resistor and thereafter collapsing at the heating resistor The edge protection layer covers just the edges of the heating resistor in order to at least substantially protect the heating resistor from becoming damaged due to collapsing of the bubble at the heating resistor
摘要翻译： 一种用于喷墨打印装置的打印头模具（200），包括基板（302），加热电阻器和边缘保护层（209）。加热电阻器形成在基板上，并具有一个或多个边缘。加热电阻器 可操作地在足够的电流流过加热电阻器时使墨滴从喷墨打印装置喷射，导致在加热电阻器的墨水内形成气泡，然后在加热电阻器处塌陷。边缘保护层仅覆盖 加热电阻器，以便至少基本上保护加热电阻器不会由于在加热电阻器处气泡的塌缩而损坏
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公开(公告)号：US09403372B2
公开(公告)日：2016-08-02
申请号：US14374107
申请日：2012-02-28
申请人： Brian M. Taff , Sadiq Bengali , Greg Scott Long
发明人： Brian M. Taff , Sadiq Bengali , Greg Scott Long
IPC分类号： B41J2/175 , B41J2/14 , B41J29/38 , B41J29/393
CPC分类号： B41J2/17596 , B41J2/1404 , B41J29/38 , B41J29/393 , B41J2002/14467 , B41J2202/12
摘要： In an embodiment, a fluid ejection device includes a fluidic channel having first and second ends and a drop generator disposed within the channel. A fluid reservoir is in fluid communication with the first and second ends of the channel, and an alternating-current electro-osmotic (ACEO) pump is disposed within the channel to generate net fluid flow from the reservoir at the first end, through the channel, and back to the reservoir at the second end.
摘要翻译： 在一个实施例中，流体喷射装置包括具有第一和第二端的流体通道和设置在通道内的液滴发生器。 流体储存器与通道的第一和第二端流体连通，并且在通道内设置交流电渗透（ACEO）泵，以在第一端通过通道从储存器产生净流体流 ，并回到第二端的水库。
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公开(公告)号：US20060121747A1
公开(公告)日：2006-06-08
申请号：US11341101
申请日：2006-01-27
申请人： Victorio Chavarria , Sadiq Bengali , Ronald Enck
发明人： Victorio Chavarria , Sadiq Bengali , Ronald Enck
IPC分类号： H01L21/8238
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
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公开(公告)号：US07781843B1
公开(公告)日：2010-08-24
申请号：US11652182
申请日：2007-01-11
申请人： James Weaver , S. Jonathan Wang , John Chen , Sadiq Bengali , Edward Enciso , Tom Cooney
发明人： James Weaver , S. Jonathan Wang , John Chen , Sadiq Bengali , Edward Enciso , Tom Cooney
IPC分类号： H01L21/335
CPC分类号： H01L21/823418 , H01L21/823462 , H01L21/823814 , H01L21/823857 , H01L27/0922 , H01L29/7833
摘要： High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.
摘要翻译： 高压CMOS器件和低电压CMOS器件集成在公共衬底上，通过在至少有源器件区域上形成牺牲膜，光刻地限定高电压CMOS器件的器件有源区，通过牺牲膜选择性地注入掺杂物到 光刻定义的高压CMOS器件的器件有源区，扩散注入的掺杂剂，去除牺牲膜，随后形成低电压CMOS器件。
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公开(公告)号：US20070097292A1
公开(公告)日：2007-05-03
申请号：US11263525
申请日：2005-10-31
申请人： Benjamin Clark , Sadiq Bengali
发明人： Benjamin Clark , Sadiq Bengali
IPC分类号： G02F1/1333
CPC分类号： G02F1/133377 , G02F1/1334 , G02F1/133617
摘要： Various embodiments and methods relating to an ultra-violet radiation absorbing grid for attenuating transmission of near UV-light are disclosed.
摘要翻译： 公开了与用于衰减近紫外光的透射的紫外辐射吸收栅相关的各种实施例和方法。
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公开(公告)号：US06917459B2
公开(公告)日：2005-07-12
申请号：US10454423
申请日：2003-06-03
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08 , G02B26/00 , B05D5/06 , C23C14/02 , H01L21/00 , H01L21/44 , H01L21/461
CPC分类号： B81C1/00801 , B81B2201/042 , B81B2203/0181 , B81C2203/0714 , B81C2203/0771 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a first side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, forming a protective layer over the dielectric layer, defining an electrical contact area for the MEMS device on the protective layer, and forming an opening within the electrical contact area through the protective layer and the dielectric layer to the at least one conductive layer of the substructure.
摘要翻译： 一种形成MEMS器件的方法包括提供包括基底材料的底层结构和形成在基底材料的第一侧上的至少一个导电层，在底层结构的至少一个导电层上形成介电层，形成保护层 限定介电层上的MEMS器件的电接触面积，以及在通过保护层和电介质层的电接触区域内形成在子结构的至少一个导电层上的开口。
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