公开(公告)号：US07845618B2

公开(公告)日：2010-12-07

申请号：US11767518

申请日：2007-06-24

申请人： Sam Hyungsam Kim ,  Jae-Chull Lee ,  William N. Sterling ,  Paul Brown

发明人： Sam Hyungsam Kim ,  Jae-Chull Lee ,  William N. Sterling ,  Paul Brown

IPC分类号： F16K1/16

CPC分类号： F16K51/02 ,  F16K1/2007 ,  F16K1/2021 ,  F16K1/2028 ,  F16K1/205 ,  F16K1/2078 ,  F16K1/24

摘要： Embodiments of an apparatus for sealing a substrate transfer passage in a chamber are provided. In one embodiment, an apparatus for sealing a substrate transfer passage in a chamber includes an elongated door member coupled to an actuator by a ball joint. The ball joint is configured to allow movement of the door member relative to the lever arm around a center of the ball joint. In one embodiment, a sealing face of the elongated door is curved. In another embodiment, the chamber is one of a chemical vapor deposition chamber, a load lock chamber, a metrology chamber, a thermal processing chamber, or a physical vapor disposition chamber, a load lock chamber, a substrate transfer chamber or a vacuum chamber.

摘要翻译： 提供了用于密封腔室中的基底输送通道的装置的实施例。 在一个实施例中，用于密封腔室中的衬底传送通道的设备包括通过球窝接头联接到致动器的细长门构件。 球形接头构造成允许门构件相对于杠杆臂围绕球窝接头的中心移动。 在一个实施例中，细长门的密封面是弯曲的。 在另一个实施例中，该腔室是化学气相沉积室，负载锁定室，计量室，热处理室或物理蒸汽分配室，负载锁定室，衬底传送室或真空室之一。

公开(公告)号：US20160013064A1

公开(公告)日：2016-01-14

申请号：US14797508

申请日：2015-07-13

申请人： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

发明人： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC分类号： H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

摘要： Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

摘要翻译： 提供了一种产生等离子体的方法和一种制造包括该方法的半导体器件的方法，其可以提高蚀刻工艺中的选择性并最小化对层的损害。 产生等离子体的方法包括：通过将至少一个第一工艺气体供应到第一远程等离子体源（RPS）中并且以第一占空比施加具有第一功率的第一能量并产生第二等离子体来产生第一等离子体，通过提供至少一个第二等离子体 将气体处理成第二RPS并且以第二占空比施加具有第二功率的第二能量。

公开(公告)号：US09039864B2

公开(公告)日：2015-05-26

申请号：US12892892

申请日：2010-09-28

申请人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

发明人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

IPC分类号： H01J37/32

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32577 ,  Y10T29/49117

摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

摘要翻译： RF阻抗匹配网络（33）的电接地（36）连接到等离子体室的接地室盖（18）上的连接区域（50）。 连接区域离开室盖的中心偏离工件通道（20）。 或者，RF电源（30）具有电接地输出（32），其连接到具有偏移的腔室盖上的连接区域（52）。 或者，RF传输线（37）具有电接地导体（39），其连接在RF电源的接地输出端和具有偏移的腔室盖上的连接区域（52）之间。

公开(公告)号：US09685346B2

公开(公告)日：2017-06-20

申请号：US14797508

申请日：2015-07-13

申请人： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

发明人： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

IPC分类号： H01L21/311 ,  H01J37/32 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

摘要： Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

公开(公告)号：US20110126405A1

公开(公告)日：2011-06-02

申请号：US12892892

申请日：2010-09-28

申请人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

发明人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

IPC分类号： H01R43/00 ,  H01L21/02

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32577 ,  Y10T29/49117

摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

摘要翻译： RF阻抗匹配网络（33）的电接地（36）连接到等离子体室的接地室盖（18）上的连接区域（50）。 连接区域离开室盖的中心偏离工件通道（20）。 或者，RF电源（30）具有电接地输出（32），其连接到具有偏移的腔室盖上的连接区域（52）。 或者，RF传输线（37）具有电接地导体（39），其连接在RF电源的接地输出端和具有偏移的腔室盖上的连接区域（52）之间。