公开(公告)号：US08314005B2

公开(公告)日：2012-11-20

申请号：US13010004

申请日：2011-01-20

申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

IPC分类号： H01L21/76

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

公开(公告)号：US08492239B2

公开(公告)日：2013-07-23

申请号：US13602957

申请日：2012-09-04

申请人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

发明人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

IPC分类号： H01L21/76

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个第一处理; 在执行所述至少一个第一处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料; 并且在从所述多个孔中除去所述填充材料之后，对所述结构执行至少一个第二工艺，其中所述至少一个第二工艺在大于所述第二温度的第三温度下进行。

公开(公告)号：US20120329273A1

公开(公告)日：2012-12-27

申请号：US13602957

申请日：2012-09-04

申请人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

发明人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

IPC分类号： H01L21/28

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个第一处理; 在执行所述至少一个第一处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料; 并且在从所述多个孔中除去所述填充材料之后，对所述结构进行至少一个第二工艺，其中所述至少一个第二工艺在大于所述第二温度的第三温度下进行。

公开(公告)号：US20120282784A1

公开(公告)日：2012-11-08

申请号：US13553264

申请日：2012-07-19

申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

IPC分类号： H01L21/3105

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

公开(公告)号：US08623741B2

公开(公告)日：2014-01-07

申请号：US13553264

申请日：2012-07-19

申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

IPC分类号： H01L21/76 ,  H01L21/31

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

公开(公告)号：US20110183525A1

公开(公告)日：2011-07-28

申请号：US13010004

申请日：2011-01-20

申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

公开(公告)号：US08541301B2

公开(公告)日：2013-09-24

申请号：US13180734

申请日：2011-07-12

申请人： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

发明人： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

IPC分类号： H01L21/4763

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76828 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的表面，其中填充材料包括聚合物和至少一种添加剂，其中至少一种添加剂包括表面活性剂，高分子量聚合物和溶剂中的至少一种; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上 第一层

公开(公告)号：US20130017688A1

公开(公告)日：2013-01-17

申请号：US13180734

申请日：2011-07-12

申请人： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

发明人： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76828 ,  H01L2221/1047

摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的表面，其中填充材料包括聚合物和至少一种添加剂，其中至少一种添加剂包括表面活性剂，高分子量聚合物和溶剂中的至少一种; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上 第一层

公开(公告)号：US20130056874A1

公开(公告)日：2013-03-07

申请号：US13226281

申请日：2011-09-06

申请人： Maxime Darnon ,  Geraud J.-M. Dubois ,  Sebastian U. Engelmann ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Willi Volksen

发明人： Maxime Darnon ,  Geraud J.-M. Dubois ,  Sebastian U. Engelmann ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian ,  Willi Volksen

IPC分类号： H01L21/3065 ,  H01L23/48

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76826

摘要： A semiconductor device is accepted at a stage of its fabrication, at which stage the device includes a diffusion-barrier cap-material (DBCM) layer and an intermetal dielectric layer covering the DBCM layer. The DBCM layer is exposed and it is suitable for removal by an etching procedure in a portion of a pattern contained in the intermetal dielectric layer. A silylation treatment is performed on the semiconductor device prior to the etching procedure for removing the DBCM layer. The intermetal dielectric layer of the completed device has surfaces in contact with metal interconnects and metal vias, and it may have an excess of carbon content near at least a portion of the these surfaces.

摘要翻译： 半导体器件在其制造阶段被接受，在该阶段，器件包括覆盖DBCM层的扩散阻挡帽 - 材料（DBCM）层和金属间电介质层。 DBCM层被暴露，并且适合于在金属间电介质层中包含的图案的一部分中通过蚀刻工艺去除。 在用于去除DBCM层的蚀刻过程之前，在半导体器件上进行甲硅烷基化处理。 完成的器件的金属间电介质层具有与金属互连和金属通孔接触的表面，并且其可以在这些表面的至少一部分附近具有过量的碳含量。

公开(公告)号：US07309754B2

公开(公告)日：2007-12-18

申请号：US10673052

申请日：2003-09-26

申请人： Phillip Joe Brock ,  Michael W. Chaw ,  Dan Dawson ,  Craig Hawker ,  James L. Hedrick ,  Teddie P. Magbitang ,  Dennis McKean ,  Robert D. Miller ,  Richard I. Palmisano ,  Willi Volksen

发明人： Phillip Joe Brock ,  Michael W. Chaw ,  Dan Dawson ,  Craig Hawker ,  James L. Hedrick ,  Teddie P. Magbitang ,  Dennis McKean ,  Robert D. Miller ,  Richard I. Palmisano ,  Willi Volksen

IPC分类号： C08G73/00 ,  C08G73/08 ,  C08G59/00

CPC分类号： G11B5/102

摘要： An encapsulant fluid is provided comprising a mixture of a diene-containing compound and a dienophilic compound. At least one of the diene-containing and the dienophilic compounds is protected so that the compounds do not substantially react with each other at room temperature. The diene-containing and the dienophilic compounds undergo a reversible Diels-Alder polymerization reaction at a polymerization temperature above room temperature to form a solid debondable polymeric encapsulant. Also provided are methods for forming slider assemblies and methods for patterning a slider surface using the encapsulant.

摘要翻译： 提供了包含含二烯的化合物和二亲性化合物的混合物的密封剂流体。 至少一种含二烯和二亲性化合物被保护，使得化合物在室温下基本上不会彼此反应。 含二烯和二亲性化合物在聚合温度高于室温的条件下进行可逆的狄尔斯 - 阿尔德聚合反应，形成固体可分散的聚合物密封剂。 还提供了用于形成滑块组件的方法和使用该密封剂来构图滑块表面的方法。