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    Homogeneous porous low dielectric constant materials
    1.
    发明授权
    Homogeneous porous low dielectric constant materials 有权
    均质多孔低介电常数材料

    公开(公告)号：US08314005B2

    公开(公告)日：2012-11-20

    申请号：US13010004

    申请日：2011-01-20

    申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    IPC分类号： H01L21/76

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

    Homogeneous porous low dielectric constant materials
    2.
    发明授权
    Homogeneous porous low dielectric constant materials 有权
    均质多孔低介电常数材料

    公开(公告)号：US08623741B2

    公开(公告)日：2014-01-07

    申请号：US13553264

    申请日：2012-07-19

    申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    IPC分类号： H01L21/76 ,  H01L21/31

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

    Homogeneous Porous Low Dielectric Constant Materials
    3.
    发明申请
    Homogeneous Porous Low Dielectric Constant Materials 有权
    均质多孔低介电常数材料

    公开(公告)号：US20110183525A1

    公开(公告)日：2011-07-28

    申请号：US13010004

    申请日：2011-01-20

    申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。

    Homogeneous porous low dielectric constant materials
    4.
    发明授权
    Homogeneous porous low dielectric constant materials 有权
    均质多孔低介电常数材料

    公开(公告)号：US08492239B2

    公开(公告)日：2013-07-23

    申请号：US13602957

    申请日：2012-09-04

    申请人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

    发明人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

    IPC分类号： H01L21/76

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个第一处理; 在执行所述至少一个第一处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料; 并且在从所述多个孔中除去所述填充材料之后，对所述结构执行至少一个第二工艺，其中所述至少一个第二工艺在大于所述第二温度的第三温度下进行。

    HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS
    5.
    发明申请
    HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS 有权
    均质多孔低介电常数材料

    公开(公告)号：US20120329273A1

    公开(公告)日：2012-12-27

    申请号：US13602957

    申请日：2012-09-04

    申请人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

    发明人： Robert L. Bruce ,  Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Sampath Purushothaman ,  David L. Rath ,  Willi Volksen

    IPC分类号： H01L21/28

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个第一处理; 在执行所述至少一个第一处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料; 并且在从所述多个孔中除去所述填充材料之后，对所述结构进行至少一个第二工艺，其中所述至少一个第二工艺在大于所述第二温度的第三温度下进行。

    HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS
    6.
    发明申请
    HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS 有权
    均质多孔低介电常数材料

    公开(公告)号：US20120282784A1

    公开(公告)日：2012-11-08

    申请号：US13553264

    申请日：2012-07-19

    申请人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    发明人： Sampath Purushothaman ,  Geraud Jean-Michel Dubois ,  Teddie P. Magbitang ,  Willi Volksen ,  Theo J. Frot

    IPC分类号： H01L21/3105

    CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/7682 ,  H01L2221/1047

    摘要： In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.

    摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有覆盖衬底的第一层的结构，其中第一层包括具有多个孔的电介质材料; 将填充材料施加到第一层的暴露表面; 将结构加热到第一温度以使填充材料均匀地填充多个孔; 在填充所述多个孔之后，在所述结构上执行至少一个处理; 并且在执行所述至少一个处理之后，通过将所述结构加热至第二温度以分解所述填充材料，从所述多个孔中除去所述填充材料。