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公开(公告)号：US10134855B2
公开(公告)日：2018-11-20
申请号：US14691092
申请日：2015-04-20
发明人： Chan Woo Yang , Hyune Ok Shin , Chang Oh Jeong , Su Kyoung Yang , Dong Min Lee
IPC分类号： H01L29/417 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/45 , C22C29/12
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.
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公开(公告)号：US09774008B2
公开(公告)日：2017-09-26
申请号：US14698265
申请日：2015-04-28
发明人： Dong Min Lee , Hyun Eok Shin , Chan Woo Yang , Su Kyoung Yang
CPC分类号： H01L51/5271 , H01L51/5265 , H01L2251/301 , H01L2251/558
摘要： An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.
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公开(公告)号：US10067276B2
公开(公告)日：2018-09-04
申请号：US15477719
申请日：2017-04-03
发明人： Moon Jung An , Jung Gun Nam , Su Kyoung Yang , Gyung Min Baek , Kang Soo Han , Joon Yong Park , Sang Won Shin , Hyun Eok Shin
IPC分类号： G02F1/1333 , G02B5/30 , G02F1/1335 , G02F1/1368
CPC分类号： G02B5/3058 , G02F1/133345 , G02F1/133512 , G02F1/133528 , G02F1/1368 , G02F2001/133548 , G02F2201/123 , G02F2201/50
摘要： Provided is a polarizer. The polarizer includes a base layer and a wire grid layer which is disposed on the base layer and which include a plurality of wire metal patterns extending along a first direction and spaced apart from each other along a second direction crossing the first direction, wherein the wire grid layer is made of an aluminum (Al) alloy containing nickel (Ni) and lanthanum (La).
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4.发明授权公开(公告)号：US10008518B2
公开(公告)日：2018-06-26
申请号：US14926416
申请日：2015-10-29
发明人： Chan Woo Yang , Hyun Eok Shin , Su Kyoung Yang , Dong Min Lee
IPC分类号： G02F1/136 , H01L27/12 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1262 , H01L27/1288 , H01L29/7869 , H01L29/78696
摘要： A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.
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公开(公告)号：US11682705B2
公开(公告)日：2023-06-20
申请号：US17088779
申请日：2020-11-04
发明人： Chan Woo Yang , Hyune Ok Shin , Chang Oh Jeong , Su Kyoung Yang , Dong Min Lee
IPC分类号： H01L29/417 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/45 , C22C29/12
CPC分类号： H01L29/41733 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/7869 , C22C29/12
摘要： A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.
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公开(公告)号：US10861949B2
公开(公告)日：2020-12-08
申请号：US16192802
申请日：2018-11-16
发明人： Chan Woo Yang , Hyune Ok Shin , Chang Oh Jeong , Su Kyoung Yang , Dong Min Lee
IPC分类号： H01L29/417 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/45 , C22C29/12
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.
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公开(公告)号：US11793044B2
公开(公告)日：2023-10-17
申请号：US16704437
申请日：2019-12-05
发明人： Dong Min Lee , Sang Woo Sohn , Do Keun Song , Sang Won Shin , Hyun Eok Shin , Su Kyoung Yang , Kyeong Su Ko , Sang Gab Kim , Joon Geol Lee
IPC分类号： H10K59/131 , H01L27/12 , H01L21/02
CPC分类号： H10K59/1315 , H01L27/1259 , H01L21/02068
摘要： Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.
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公开(公告)号：US20210057532A1
公开(公告)日：2021-02-25
申请号：US17088779
申请日：2020-11-04
发明人： Chan Woo YANG , Hyune OK SHIN , Chang Oh JEONG , Su Kyoung Yang , Dong Min LEE
IPC分类号： H01L29/417 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/45
摘要： A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.
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公开(公告)号：US09786694B2
公开(公告)日：2017-10-10
申请号：US15264490
申请日：2016-09-13
发明人： Gwang Min Cha , Su Kyoung Yang , Chan Woo Yang
IPC分类号： H01L27/12 , H01L23/52 , H01L23/532 , H01L29/24 , H01L29/786 , H01L29/66 , H01L29/423 , H01L21/4763 , H01L21/02 , H01L29/45
CPC分类号： H01L27/124 , H01L21/0206 , H01L21/02175 , H01L21/02244 , H01L21/47635 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L27/1225 , H01L27/1259 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66969 , H01L29/7869
摘要： A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.
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