公开(公告)号：US20150184285A1

公开(公告)日：2015-07-02

申请号：US14558521

申请日：2014-12-02

Applicant: Samsung Display Co., LTD.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon MOON ,  Sang-woo SOHN ,  Sang-Won SHIN ,  Katsushi KISHIMOTO

IPC: C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3405 ,  C23C14/228 ,  C23C14/35 ,  H01J37/3447

Abstract: A sputtering apparatus includes a chamber, a plate disposed inside the chamber, a target unit including at least one targer facing the plate, a power supply unit coupled to the target, and a filter unit disposed between the substrate and the target. The filter unit includes at least one filter. A substrate is disposed on the plate. The filter unit may include a first filter and a second filter with the first filter disposed between the target and the second filter.

Abstract translation: 溅射装置包括室，设置在室内的板，包括面向板的至少一个更大的目标单元，耦合到靶的电源单元和布置在基板和靶之间的过滤器单元。 过滤器单元包括至少一个过滤器。 基板设置在板上。 过滤器单元可以包括第一过滤器和第二过滤器，其中第一过滤器设置在目标和第二过滤器之间。

公开(公告)号：US20160204267A1

公开(公告)日：2016-07-14

申请号：US14886214

申请日：2015-10-19

Applicant: Samsung Display CO., Ltd.

Inventor： Yeon-Keon MOON ,  Je-Hun LEE

IPC: H01L29/786 ,  H01L21/467 ,  H01L29/423 ,  H01L21/475 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L21/47

CPC classification number: H01L29/7869 ,  H01L21/32139 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78642

Abstract: Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

Abstract translation: 提供了一种薄膜晶体管（TFT），其包括在与第二电极分离的基板上的第一电极，在包括沟道区域的第二电极上的氧化物半导体图案，氧化物半导体图案上的第三电极， 所述基板包括所述第三电极，所述第三电极包括暴露所述第一电极的一部分，所述第二电极的一部分和所述第三电极的一部分的第一接触孔，所述第一绝缘层上的对应于所述氧化物半导体的一部分的栅电极 在该基板上形成第二绝缘层，该第二绝缘层包括栅电极，该栅电极包括与第一接触孔相对应的第二接触孔，该第二接触孔暴露第二电极的一部分;以及通过第二绝缘层与第二电极电连接的第二绝缘层上的像素电极 第一接触孔和第二接触孔。

公开(公告)号：US20150270118A1

公开(公告)日：2015-09-24

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi KISHIMOTO ,  Yeon-Keon MOON ,  Sang-Woo SOHN ,  Takayuki FUKASAWA ,  Sang-Won SHIN

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/46

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Abstract translation: 一种氧化物半导体沉积装置，包括加热室，其被配置为加热和等离子体处理包括绝缘层的第一基板，并且包括室主体，设置在室主体中的加热第一基板的加热器，以及 与加热器隔开的阴极板，施加到阴极板的高频电压，以及第一处理室，其被配置为在第一基板的绝缘层上提供氧化物半导体层。