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1.发明申请ETCHANT, METHOD OF MANUFACTURING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE ETCHANT 有权蚀刻剂，使用蚀刻剂制造金属接线和薄膜晶体管基板的方法公开(公告)号：US20150004758A1
公开(公告)日：2015-01-01
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L21/306 , H01L29/66 , C09K13/08
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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公开(公告)号：US11639470B2
公开(公告)日：2023-05-02
申请号：US17388712
申请日：2021-07-29
发明人： Jonghee Park , Hyoung Sik Kim , O Byoung Kwon , Gi-Yong Nam , Kyungchan Min , Suck Jun Lee , Youngmin Kim , Jinhyung Kim , Donghun Lee , Kyu-Hun Lim , Dongmin Jang
摘要： An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
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3.发明授权Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant 有权使用蚀刻剂制造金属布线和薄膜晶体管基板的蚀刻剂组成和方法公开(公告)号：US09293565B2
公开(公告)日：2016-03-22
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L29/66 , C09K13/08 , H01L21/3213 , C23F1/02 , C23F1/18 , C23F1/26 , H01L29/45 , H01L29/49 , H01L27/32
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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公开(公告)号：US12031076B2
公开(公告)日：2024-07-09
申请号：US18122706
申请日：2023-03-17
发明人： Jonghee Park , Hyoung Sik Kim , O Byoung Kwon , Gi-Yong Nam , Kyungchan Min , Suck Jun Lee , Youngmin Kim , Jinhyung Kim , Donghun Lee , Kyu-Hun Lim , Dongmin Jang
CPC分类号： C09K13/06 , C23F1/02 , C23F1/44 , H10K59/1201 , H10K71/233 , H10K71/621
摘要： An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
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公开(公告)号：US20220204846A1
公开(公告)日：2022-06-30
申请号：US17388712
申请日：2021-07-29
发明人： JONGHEE PARK , HYOUNG SIK KIM , O Byoung Kwon , Gi-Yong Nam , Kyungchan Min , SUCK JUN LEE , YOUNGMIN KIM , JINHYUNG KIM , DONGHUN LEE , KYU-HUN LIM , DONGMIN JANG
摘要： An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
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公开(公告)号：US20230220280A1
公开(公告)日：2023-07-13
申请号：US18122706
申请日：2023-03-17
发明人： JONGHEE PARK , HYOUNG SIK KIM , O Byoung Kwon , Gi-Yong Nam , Kyungchan Min , SUCK JUN LEE , YOUNGMIN KIM , JINHYUNG KIM , DONGHUN LEE , KYU-HUN LIM , DONGMIN JANG
CPC分类号： H10K71/621 , C09K13/06 , H10K59/1201
摘要： An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
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公开(公告)号：US09741827B2
公开(公告)日：2017-08-22
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-Il Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C23F1/18 , H01L29/66 , H01L27/12 , H01L21/3213 , C23F1/02 , C23F1/26 , H01L29/45 , H01L29/49
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
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公开(公告)号：US20150307779A1
公开(公告)日：2015-10-29
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-ll Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C09K13/08 , H01L29/66 , H01L21/306 , H01L27/12
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
摘要翻译： 提供了包含0.5至20重量％的过硫酸盐的蚀刻剂组合物; 0.01〜2重量％的氟化合物; 1〜10重量％的无机酸; 0.5〜5重量％的含氮（氮原子）的杂环化合物; 0.1至5重量％的氯化物; 0.05〜3重量％的铜盐; 有机酸或0.1〜10重量％的有机酸盐; 电子给体化合物为0.1〜5重量％ 和残留量的溶剂。 还提供了使用该显示装置制造显示装置的方法。
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