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1.发明公开公开(公告)号：US20240318074A1
公开(公告)日：2024-09-26
申请号：US18496793
申请日：2023-10-27
发明人： Youngsik Kim , Sungjae Kim , Seungwon Park , Bitna Yoon , Donghee Lee , Junehyuk Jung
IPC分类号： C09K11/62 , C09K11/58 , H10K50/115
CPC分类号： C09K11/621 , C09K11/582 , H10K50/115
摘要： A quantum dot including a core represented by Formula 1, a method of manufacturing the quantum dot, and a light-emitting device and an apparatus including the quantum dot are provided:
M1aM2bM3cM4dM5e, Formula 1
wherein M1 is a Group I metal element, M2 and M3 are each independently a Group III metal element, and M4 and M5 are each independently a Group VI element; and a is 0.05 to 0.60, b is 0 to 1.4, c is 0 to 1.4, d is 0 to 2.0, and e is 0 to 2.0.-
2.发明公开公开(公告)号：US20240199950A1
公开(公告)日：2024-06-20
申请号：US18537079
申请日：2023-12-12
发明人： Junehyuk Jung , Sungjae Kim , Youngsik Kim , Seungwon Park , Bitna Yoon , Donghee Lee
CPC分类号： C09K11/623 , C09K11/584
摘要： Provided are a quantum dot, a method of preparing the same, and an electronic apparatus including the same, the quantum dot including a core including copper (Cu), a Group III element, a Group VI element, and gallium (Ga), a first shell covering the core, and a second shell covering the first shell, wherein the first shell includes a Group III-VI compound.
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3.发明公开公开(公告)号：US20240301287A1
公开(公告)日：2024-09-12
申请号：US18584679
申请日：2024-02-22
发明人： Bitna Yoon , Sungjae Kim , Youngsik Kim , Seungwon Park , Donghee Lee , Junehyuk Jung
IPC分类号： C09K11/62 , B82Y20/00 , B82Y40/00 , H10K50/115
CPC分类号： C09K11/623 , C09K11/621 , H10K50/115 , B82Y20/00 , B82Y40/00
摘要： A quantum dot having a narrow full width at half maximum, a manufacturing method thereof, and a light-emitting device, an optical member, and an apparatus including the quantum dot are provided.
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公开(公告)号：US20230329026A1
公开(公告)日：2023-10-12
申请号：US18133383
申请日：2023-04-11
发明人： Seungwon Park , Kawon Pak , Seunghee Jang , Donghee Lee , Taekjoon Lee , Junehyuk Jung
IPC分类号： H10K50/115 , B82Y30/00 , B82Y40/00 , C09K11/70
CPC分类号： H10K50/115 , C09K11/70 , B82Y40/00 , B82Y30/00
摘要： An electronic apparatus including the quantum dot, wherein the quantum dot may include a core and a shell covering at least a portion of the core, wherein the core may include indium (In), gallium (Ga), and phosphorus (P), the shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or a combination thereof, in the core and the shell, the number of moles of Ga relative to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn+MGa)) may be in a range of about 0.02 to about 0.18, and in the core and the shell, the sum of the number of moles of In and the number of moles of Ga relative to the number of moles of P ((MIn+MGa)/MP) may be in a range of about 1 to about 1.2.
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公开(公告)号：US11725142B2
公开(公告)日：2023-08-15
申请号：US17546882
申请日：2021-12-09
发明人： Junehyuk Jung , Seungwon Park , Junghoon Song , Baekhee Lee , Junwoo Lee , Jaebok Chang
CPC分类号： C09K11/883 , C09K11/0883 , C09K11/7492 , C09K11/75 , B82Y20/00 , B82Y40/00
摘要： A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.
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6.发明公开公开(公告)号：US20230193122A1
公开(公告)日：2023-06-22
申请号：US17960284
申请日：2022-10-05
发明人： Junehyuk Jung , Jaebok Chang , Sungjae Kim , Juo Nam , Donghee Lee , Taekjoon Lee
CPC分类号： C09K11/025 , C09K11/883 , C09K11/0883 , B82Y20/00
摘要： Provided are a method of preparing a quantum dot, a quantum dot prepared thereby, and an electronic apparatus including the quantum dot. The method includes: preparing a core including a Group III element, a Group V element, and gallium (Ga); and preparing a shell covering the core by using a composition for forming the shell. The composition for forming the shell includes a first additive, and the first additive is a metal halide.
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公开(公告)号：US20230309333A1
公开(公告)日：2023-09-28
申请号：US18187591
申请日：2023-03-21
发明人： Kyungsig Lee , Jaebok Chang , Junehyuk Jung
IPC分类号： H10K50/115 , B82Y30/00 , C09K11/70 , C09K11/88
CPC分类号： H10K50/115 , B82Y30/00 , C09K11/70 , C09K11/883
摘要： A quantum dot composition and an electronic apparatus including the quantum dot composition are provided. The quantum dot composition includes a first quantum dot and a second quantum dot, and the first quantum dot and the second quantum dot each independently include a core; and a shell covering at least part of the core, the core of the first quantum dot includes a first semiconductor compound, the core of the second quantum dot includes a second semiconductor compound, the first semiconductor compound and the second semiconductor compound are different from each other, and a maximum emission wavelength of a photoluminescence (PL) spectrum of the first quantum dot is greater than a maximum emission wavelength of a PL spectrum of the second quantum dot.
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公开(公告)号：US20230183568A1
公开(公告)日：2023-06-15
申请号：US18062727
申请日：2022-12-07
发明人： Juo Nam , Jaebok Chang , Junehyuk Jung , Sungjae Kim , Donghee Lee , Taekjoon Lee
CPC分类号： C09K11/62 , B82Y20/00 , C09K11/64 , H01L33/504 , H01L2933/0041
摘要： Provided are: a method of preparing a quantum dot, the method including preparing a first particle including a Group III-V compound including gallium (Ga) and treating the first particle with an aluminum (Al) composition including an aluminum (Al) precursor; a quantum dot manufactured by the method; an optical member including the quantum dot; and an electronic apparatus including the quantum dot.
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公开(公告)号：US20220204843A1
公开(公告)日：2022-06-30
申请号：US17546882
申请日：2021-12-09
发明人： Junehyuk Jung , Seungwon Park , Junghoon Song , Baekhee Lee , Junwoo Lee , Jaebok Chang
摘要： A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.
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