Abstract:
A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.
Abstract:
A quantum dot light-emitting device and a display apparatus including the same, the device including a light-emitting device that emits a first light; a quantum dot layer facing the light-emitting device, the quantum dot layer including a plurality of quantum dots, absorbing the first light, and emitting a second light and a third light that have different wavelength ranges compared to the first light; and a band pass filter on the quantum dot layer, the band pass filter cutting off a portion of the second light and a portion of the third light.
Abstract:
A method of manufacturing a quantum dot optical component is provided. By the method, a plurality of quantum dot lines are formed on a first substrate, an encapsulation member that encapsulates the quantum dot lines is formed on the first substrate, a second substrate is laminated on the encapsulation member, and the first and second substrates are cut into a plurality of quantum dot optical components each including at least one of the quantum dot lines.