ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20150340417A1

    公开(公告)日:2015-11-26

    申请号:US14815327

    申请日:2015-07-31

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR
    2.
    发明申请
    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR 有权
    薄膜晶体管,薄膜晶体管基板,显示装置及制造薄膜晶体管的方法

    公开(公告)号:US20150255278A1

    公开(公告)日:2015-09-10

    申请号:US14478273

    申请日:2014-09-05

    Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

    Abstract translation: 一种薄膜晶体管,包括栅电极; 与栅电极绝缘的有源层; 源电极和漏电极,与栅电极绝缘并且电连接到有源层; 第一蚀刻停止层,其由绝缘材料形成并且与位于有源层的与源电极和漏电极电连接的区域之间的有源层的一部分接触; 在第一蚀刻停止层上的第二蚀刻停止层,第二蚀刻停止层由与用于形成第一蚀刻停止层的绝缘材料相同类型的绝缘材料形成,第二蚀刻停止层的密度高于 第一蚀刻停止层; 以及第二蚀刻停止层上的第三蚀刻停止层。

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